Charge trapping and detrapping in HfO2 high-κ gate stacks

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 273-277

  Gusev, E P ^a   D'Emic, C ^a   Zafar, S ^a   Kumar, A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Atomic layer deposition; Charge trapping; HfO2; High gate dielectrics

Indexed keywords

ANNEALING; CHARGE TRANSFER; DIELECTRIC MATERIALS; ELECTRON TRAPS; HAFNIUM COMPOUNDS; OXIDE SUPERCONDUCTORS; PERMITTIVITY; SILICA; THERMAL EFFECTS; THRESHOLD VOLTAGE;

ATOMIC LAYER DEPOSITION; CHARGE TRAPPING; HFO2; HIGH-K GATE DIELECTRICS;

GATES (TRANSISTOR);

EID: 1642603065     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.01.003     Document Type: Conference Paper

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