Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 183-188

  Tsujikawa, Shimpei ^a   Mine, Toshiyuki ^a   Watanabe, Kikuo ^a   Shimamoto, Yasuhiro ^a   Tsuchiya, Ryuta ^a   Ohnishi, Kazuhiro ^a   Onai, Takahiro ^a   Yugami, Jiro ^a   Kimura, Shinichiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DIELECTRIC MATERIALS; INTEGRATED CIRCUITS; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; NITROGEN; RECONFIGURABLE HARDWARE; SILICON NITRIDE; THERMODYNAMIC STABILITY;

BASIC MECHANISM; GATE DIELECTRIC THICKNESS; HIGH CARRIER MOBILITY; NEGATIVE BIAS TEMPERATURE INSTABILITY; OXYNITRIDE GATE DIELECTRIC; SIN GATE DIELECTRICS; SION GATE DIELECTRICS; ULTRATHIN GATE DIELECTRICS;

GATE DIELECTRICS;

EID: 84955259235     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197743     Document Type: Conference Paper

References (11)

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