Electrical characterisation of high-k materials prepared by atomic layer CVD

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 94-99

  Carter, R J ^a   Cartier, E ^b   Caymax, M ^a   De Gendt, S ^a   Degraeve, R ^a   Groeseneken, G ^a   Heyns, M ^a   Kauerauf, T ^a   Kerber, A ^b   Kubicek, S ^a   Lujan, G ^a   Pantisano, L ^a   Tsai, W ^b   Young, E ^b  

^a imec   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHARACTERIZATION; DEPOSITION; DEPOSITS; DIELECTRIC DEVICES; GATE DIELECTRICS; LAMINATES; MOS CAPACITORS; MOS DEVICES; RECONFIGURABLE HARDWARE; THIN FILMS; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

ELECTRICAL CHARACTERISATION; EQUIVALENT OXIDE THICKNESS; GAS SOLID INTERACTION; GASEOUS PRECURSORS; HIGH DIELECTRIC CONSTANT MATERIALS; HIGH- K GATE DIELECTRICS; INTEGRATION ISSUES; TUNNELLING CURRENT;

INTERFACES (MATERIALS);

EID: 0038184624     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967554     Document Type: Conference Paper

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