Titanium dioxide (TiO2)-based gate insulators

IBM Journal of Research and Development

Volumn 43, Issue 3, 1999, Pages 383-392

  Campbell, S A ^a   Kim, H S ^a   Gilmer, D C ^b   He, B ^a   Ma, T ^a   Gladfelter, W L ^c  

^a University of Minnesota   (United States)

^b MOTOROLA INC   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOSFET DEVICES; PERMITTIVITY; SEMICONDUCTING SILICON; SILICA; TITANIUM DIOXIDE;

GATE INSULATOR; QUANTUM TRANSPORT MODEL;

ELECTRIC INSULATORS;

EID: 0032645835     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.433.0383     Document Type: Article

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