Fast and simple methodology for lifetime prediction of ultra-thin oxides

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1999, Pages 381-388

  Nigam, T ^a   Degraeve, R ^a   Groeseneken, G ^a   Heyns, M M ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRAPS; EXTRAPOLATION; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOS CAPACITORS; OXIDES; ULTRATHIN FILMS;

CONSTANT VOLTAGE STRESSING; GATE OXIDE; STRESS INDUCED LEAKAGE CURRENT; ULTRA THIN OXIDES;

INTEGRATED CIRCUIT TESTING;

EID: 0032646374     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (12)