Charge trapping in ultrathin hafnium oxide

IEEE Electron Device Letters

Volumn 23, Issue 10, 2002, Pages 597-599

  Zhu, W J ^b   Ma, T P ^a,b   Zafar, S ^c   Tamagawa, T ^a,d  

^a IEEE   (United States)

^b YALE UNIVERSITY   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d Jet Process Corp   (United States)

Author keywords

Charge trapping; Hafnium oxide; High k dielectrics

Indexed keywords

ANNEALING TEMPERATURE; CHARGE TRAPPING; GATE ELECTRODE; STRESS VOLTAGE; ULTRATHIN HAFNIUM OXIDE;

ANNEALING; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRODES; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; MOS CAPACITORS; PERMITTIVITY; SUBSTRATES; ULTRATHIN FILMS;

HAFNIUM COMPOUNDS;

EID: 0036806465     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.804029     Document Type: Article

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