Model for the charge trapping in high permittivity gate dielectric stacks

Journal of Applied Physics

Volumn 89, Issue 1, 2001, Pages 792-794

  Houssa, M ^a,b   Naili, M ^b   Heyns, M M ^b   Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000990361     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1330757     Document Type: Article

References (18)

1. S. H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett. 18, 209 (1997).
2. J. H. Stathis and D. J. DiMaria, Technical Digest Int. Electron Devices Meeting (IEEE, Piscataway, 1998), p. 167.
3. R. Degraeve, N. Pangon, B. Kaczer, T. Nigam, G. Groeseneken, and A. Naem, Technical Digest of VLSI Symposium (IEEE, Piscataway, 1999), p. 59.
4. S. A. Campbell, D. C. Gilmer, X. C. Wang, M. T. Hsieh, H. S. Kim, W. L. Gladfelter, and J. Yan, IEEE Trans, Electron Devices 44, 104 (1997).
5. R. J. Cava and J. J. Krajewski, J. Appl. Phys. 83, 1613 (1998).
6. G. B. Alers et al., Appl. Phys. Lett. 72, 1308 (1998).
7. V. Mikhaelashvili, Y. Betzer, I. Prudnikov, M. Orenstein, D. Ritter, and G. Eisenstein, J. Appl. Phys. 84, 6747 (1998).
8. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
9. M. Houssa, M. Tuominen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys. 87, 8615 (2000).
10. M. Houssa, A. Stesmans, M. Naili, and M. M. Heyns, submitted to Appl. Phys. Lett. 77, (2000).
11. T. Nigam, R. Degraeve, G. Groeseneken, M. M. Heyns, and H. Maes, Proceedings 37th International Reliab. Phys. Symposium (IEEE, Piscataway, 1999), p. 381.
12. D. Arnold, E. Cartier, and D. J. DiMaria, Phys. Rev. B 49, 10278 (1994).
13. F. B. McLean, IEEE Trans. Nucl. Sci. 27, 1651 (1980).
14. D. B. Brown and N. S. Saks, J. Appl. Phys. 70, 3734 (1991).
15. V. Afanas'ev and A. Stesmans, J. Electrochem. Soc. 146, 3409 (1999).
16. M. Houssa, R. Degraeve, P. W. Mertens, M. M. Heyns, J. S. Jeon, A. Halliyal, and B. Ogle, J. Appl. Phys. 86, 6462 (1999).
17. CRC Handbook of Chemistry and Physics, edited by D. R. Lide, 79th ed. (CRC, Boca Raton, FL, 1998-1999).
18. S. R. Hofstein, IEEE Trans. Electron Devices 14, 749 (1967).