Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy

Applied Physics Letters

Volumn 71, Issue 4, 1997, Pages 500-502

  Lau, W S ^a   Zhong, L ^a   Lee, Allen ^a   See, C H ^a,c   Han, Taejoon ^b   Sandier, N P ^b   Chong, T C ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b LAM RESEARCH CORPORATION   (United States)

^c SOS Thomson Microelectronics   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; TANTALUM COMPOUNDS;

DEFECT STATES; TANTALUM PENTOXIDE; THERMALLY STIMULATED CURRENT SPECTROSCOPY;

ULTRATHIN FILMS;

EID: 0031192459     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119590     Document Type: Article

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