Monitoring interface traps by DCIV method

IEEE Electron Device Letters

Volumn 20, Issue 1, 1999, Pages 60-63

  Cai, Jin ^a  

^a University of Florida   (United States)

Author keywords

Charge carrier processes; Mosfet's; Reliability; Semiconductor insulator interfaces

Indexed keywords

EID: 0002840375     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.737574     Document Type: Article

References (2)

1. 2 interface employing MOS diodes," Solid-State Electron., vol. 5, p. 285, 1962.
2. C.-T. Sah, A. B. Tole, and R. F. Pierret, "Error analysis of surface state density determination using the MOS capacitance method," Solid-State Electron., vol. 12, pp. 689-709, Sept. 1969.