Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides

IBM Journal of Research and Development

Volumn 43, Issue 3, 1999, Pages 327-337

  Lo, S H ^a   Buchanan, D A ^b   Taur, Y ^b  

^a IBM MICROELECTRONICS   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRON TUNNELING; INTERFACES (MATERIALS); MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE; ULTRATHIN FILMS;

POLYSILICON DEPLETION; QUANTUM MECHANICAL MODEL; THRESHOLD VOLTAGE SHIFT; TRANSCONDUCTANCE REDUCTION; TUNNELING CURRENT;

MOSFET DEVICES;

EID: 0032662942     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.433.0327     Document Type: Article

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