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Volumn 3, Issue 5, 2010, Pages 3006-3076

Macroporous semiconductors

Author keywords

Applications of porous semiconductors; Electrochemistry of semiconductors; In situ impedance spectroscopy; Macropores in semiconductors; Modeling of pore formation; Porous semiconductors

Indexed keywords

DRUG DELIVERY SYSTEM; II-VI COMPOUND SEMICONDUCTORS; IMPEDANCE SPECTROSCOPY; MACROPORES; MODEL OF PORE; POROUS SEMICONDUCTORS; SINGLE CRYSTALLINE SEMICONDUCTORS; THERMOELECTRIC ELEMENT;

EID: 84855736464     PISSN: None     EISSN: 19961944     Source Type: Journal    
DOI: 10.3390/ma3053006     Document Type: Review
Times cited : (56)

References (223)
  • 3
    • 84888877249 scopus 로고    scopus 로고
    • Proceedings of the 2nd International Conference on Porous Semiconductors-Science and Technology
    • Eds.Madrid, Spain, 12-17 March 2000;
    • Canham, L.T., Parkhutik, V.P., Eds. Proceedings of the 2nd International Conference on Porous Semiconductors-Science and Technology, Madrid, Spain, 12-17 March 2000; Phys. Stat. Sol. (a) 2000, 182.
    • (2000) Phys. Stat. Sol. (a) , pp. 182
    • Canham, L.T.1    Parkhutik, V.P.2
  • 4
    • 42849084083 scopus 로고    scopus 로고
    • Proceedings of 3rd International Conference, Porous Semiconductors - Science and Technology
    • Eds. Tenerife, Spain, 10-15 March 2002;
    • Canham, L.T.; Nassiopoulou, A.; Parkhutik, V., Eds. Proceedings of 3rd International Conference, Porous Semiconductors - Science and Technology, Tenerife, Spain, 10-15 March 2002; Phys. Stat. Sol. (a) 2003, 197.
    • (2003) Phys. Stat. Sol. (a) , pp. 197
    • Canham, L.T.1    Nassiopoulou, A.2    Parkhutik, V.3
  • 5
    • 84888876749 scopus 로고    scopus 로고
    • Proceedings of 4th International Conference, Porous Semiconductors - Science and Technology
    • Eds.Valencia, Spain, 14-19 March 2004;
    • Canham, L.T.; Nassiopoulou, A.; Parkhutik, V., Eds. Proceedings of 4th International Conference, Porous Semiconductors - Science and Technology, Valencia, Spain, 14-19 March 2004; Phys. Stat. Sol. (a) 2005, 202.
    • (2005) Phys. Stat. Sol. (a) , pp. 202
    • Canham, L.T.1    Nassiopoulou, A.2    Parkhutik, V.3
  • 6
    • 84888868806 scopus 로고    scopus 로고
    • Proceedings of 5th International Conference, Porous Semiconductors - Science and Technology
    • Parkhutik, V.; Nassiopoulou, A.; Sailor, M.; Canham, L.T., Eds. Proceedings of 5th International Conference, Porous Semiconductors - Science and Technology, Sitges, Spain, 12-17 March 2006; Phys. Stat. Sol. (a) 2007, 204.
    • (2007) Phys. Stat. Sol. (a) , pp. 204
    • Parkhutik, V.1    Nassiopoulou, A.2    Sailor, M.3    Canham, L.T.4
  • 7
    • 84888876843 scopus 로고    scopus 로고
    • Proceedings of 6th International Conference, Porous Semiconductors - Science and Technology
    • Eds.Sa Coma, Mallorca, Spain, 10-14 March 2008
    • Nassiopoulou, A.; Sailor, M.; Canham, L.; Schmuki, P., Eds. Proceedings of 6th International Conference, Porous Semiconductors - Science and Technology, Sa Coma, Mallorca, Spain, 10-14 March 2008; Phys. Stat. Sol. (a) 2009, 206.
    • (2009) Phys. Stat. Sol. (a) , pp. 206
    • Nassiopoulou, A.1    Sailor, M.2    Canham, L.3    Schmuki, P.4
  • 8
    • 84888873585 scopus 로고    scopus 로고
    • State-of-the-art program on compound semiconductors 46 (SOTAPOCS 46) and processes at the semiconductor/solution interface 2
    • Eds
    • Chou, L.; Buckley, D.; Chang, P.; Etcheberry, A.; O'Dwyer, C.; Overberg, M.; Yoshimoto, M. Eds. State-of-the-art program on compound semiconductors 46 (SOTAPOCS 46) and processes at the semiconductor/solution interface 2. ECS Trans. 2007, 6, number 2.
    • (2007) ECS Trans , vol.6 , pp. 2
    • Chou, L.1    Buckley, D.2    Chang, P.3    Etcheberry, A.4    O'Dwyer, C.5    Overberg, M.6    Yoshimoto, M.7
  • 9
    • 84888866119 scopus 로고    scopus 로고
    • Porous semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann
    • Eds
    • Schmuki, P.; Föll, H.; Goesele, U.; Kelly, J.J.; Lockwood, D.J.; Ogata, Y.H., Eds. Porous semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann. ECS Trans. 2008, 25, number 3.
    • (2008) ECS Trans , vol.25 , pp. 3
    • Schmuki, P.1    Föll, H.2    Goesele, U.3    Kelly, J.J.4    Lockwood, D.J.5    Ogata, Y.H.6
  • 10
    • 85120009233 scopus 로고    scopus 로고
    • State-of-the-art program on compound semiconductors 50 (SOTAPOCS 50) and processes at the semiconductor solution interface 3
    • Eds
    • Baca, A.; O'Dwyer, C.; Brown, J.; Buckley, D.; Nam, P.; Etcheberry, A., Eds. State-of-the-art program on compound semiconductors 50 (SOTAPOCS 50) and processes at the semiconductor solution interface 3. ECS Trans. 2009, 19, number 3.
    • (2009) ECS Trans , vol.19 , pp. 3
    • Baca, A.1    O'Dwyer, C.2    Brown, J.3    Buckley, D.4    Nam, P.5    Etcheberry, A.6
  • 16
    • 33644910106 scopus 로고
    • Porous silicon formation mechanisms
    • Smith, R.L.; Collins, S.D. Porous silicon formation mechanisms. J. Appl. Phys. 1992, 71, R1-R22.
    • (1992) J. Appl. Phys. , vol.71
    • Smith, R.L.1    Collins, S.D.2
  • 17
    • 0033726229 scopus 로고    scopus 로고
    • Porous silicon: a quantum sponge structure for silicon based optoelectronics
    • Bisi, O.; Ossicini, S.; Pavesi, L. Porous silicon: a quantum sponge structure for silicon based optoelectronics. Surf. Sci. Rep. 2000, 38, 1-126.
    • (2000) Surf. Sci. Rep. , vol.38 , pp. 1-126
    • Bisi, O.1    Ossicini, S.2    Pavesi, L.3
  • 19
    • 34247545588 scopus 로고    scopus 로고
    • On the morphology and the electrochemical formation mechanism of mesoporous silicon
    • Lehmann, V.; Stengl, S.; Luigart, A. On the morphology and the electrochemical formation mechanism of mesoporous silicon. Mat. Sci. Eng. B 2000, 11, 69-70.
    • (2000) Mat. Sci. Eng. B , vol.11 , pp. 69-70
    • Lehmann, V.1    Stengl, S.2    Luigart, A.3
  • 20
    • 84888878955 scopus 로고    scopus 로고
    • Electrochemical preparation of porous semiconductors: from phenomenology to understanding
    • Chazalviel, J.-N.; Wehrspohn, R.; Ozanam, F. Electrochemical preparation of porous semiconductors: from phenomenology to understanding. Mat. Sci. Eng. B 2000, 1, 69-70.
    • (2000) Mat. Sci. Eng. B , vol.1 , pp. 69-70
    • Chazalviel, J.-N.1    Wehrspohn, R.2    Ozanam, F.3
  • 21
    • 27344446500 scopus 로고    scopus 로고
    • Fabrication of regular silicon microstructures by photo-electrochemical etching of silicon
    • Barillaro, G.; Bruschi, P.; Diligenti, A.; Nannini, A. Fabrication of regular silicon microstructures by photo-electrochemical etching of silicon. Phys. Stat. Sol. (c) 2005, 2, 3198-3202.
    • (2005) Phys. Stat. Sol. (c) , vol.2 , pp. 3198-3202
    • Barillaro, G.1    Bruschi, P.2    Diligenti, A.3    Nannini, A.4
  • 22
    • 0002781144 scopus 로고
    • Porous silicon: Theoretical Studies
    • John, G.C.; Singh, V.A. Porous silicon: Theoretical Studies. Phys. Rep. 1995, 263, 93-101.
    • (1995) Phys. Rep. , vol.263 , pp. 93-101
    • John, G.C.1    Singh, V.A.2
  • 25
    • 80455149845 scopus 로고    scopus 로고
    • Photoluminescence from silicon nanostructures: The Mutual Role of Quantum Confinement and Surface Chemistry
    • Sáar, A. Photoluminescence from silicon nanostructures: The Mutual Role of Quantum Confinement and Surface Chemistry. J. Nanophoton. 2009, 3, 032501.
    • (2009) J. Nanophoton. , vol.3 , pp. 032501
    • Sáar, A.1
  • 26
    • 0036573209 scopus 로고    scopus 로고
    • Anodic dissolution and electrolumin-escence of p-Si at high potentials in fluoride media
    • Lharch, M.; Aggour, M.; Chazalviel, J.-N.; Ozanam, F. Anodic dissolution and electrolumin-escence of p-Si at high potentials in fluoride media. J. Electrochem. Soc. 2002, 149, C250-C255.
    • (2002) J. Electrochem. Soc. , vol.149
    • Lharch, M.1    Aggour, M.2    Chazalviel, J.-N.3    Ozanam, F.4
  • 27
    • 0001753504 scopus 로고    scopus 로고
    • The structural and luminescence properties of porous silicon
    • Cullis, A.G.; Canham, L.T.; Calcott, P.D.J. The structural and luminescence properties of porous silicon. J. Appl. Phys. 1997, 82, 909-966.
    • (1997) J. Appl. Phys. , vol.82 , pp. 909-966
    • Cullis, A.G.1    Canham, L.T.2    Calcott, P.D.J.3
  • 28
    • 55849089905 scopus 로고    scopus 로고
    • New modes of FFT impedance spectroscopy applied to semiconductor pore etching and materials characterization
    • Carstensen, J.; Foca, E.; Keipert, S.; Föll, H.; Leisner, M.; Cojocaru, A. New modes of FFT impedance spectroscopy applied to semiconductor pore etching and materials characterization. Phys. Stat. Sol. (a) 2008, 205, 2485-2503.
    • (2008) Phys. Stat. Sol. (a) , vol.205 , pp. 2485-2503
    • Carstensen, J.1    Foca, E.2    Keipert, S.3    Föll, H.4    Leisner, M.5    Cojocaru, A.6
  • 29
    • 28044466904 scopus 로고    scopus 로고
    • Pore morphology and self-organization effects during etching of n-type GaP(100) in Bromide Solutions
    • Wloka, J.; Mueller, K.; Schmuki, P. Pore morphology and self-organization effects during etching of n-type GaP(100) in Bromide Solutions. Electrochem. Solid-State Lett. 2005, 8, B72-B75.
    • (2005) Electrochem. Solid-State Lett. , vol.8
    • Wloka, J.1    Mueller, K.2    Schmuki, P.3
  • 35
    • 0033895958 scopus 로고    scopus 로고
    • Crystal orientation and electrolyte dependence for macropore nucleation and stable growth on p-type Si
    • Christophersen, M.; Carstensen, J.; Feuerhake, A.; Föll, H. Crystal orientation and electrolyte dependence for macropore nucleation and stable growth on p-type Si. Mater. Sci. Eng. B 2000, 69-70, 194-198.
    • (2000) Mater. Sci. Eng. B , pp. 6970-198
    • Christophersen, M.1    Carstensen, J.2    Feuerhake, A.3    Föll, H.4
  • 37
    • 0034430368 scopus 로고    scopus 로고
    • Crystal orientation dependence of macropore formation in p-type Si using organic electrolytes
    • Christophersen, M.; Carstensen, J.; Föll, H. Crystal orientation dependence of macropore formation in p-type Si using organic electrolytes. Phys. Stat. Sol. (a) 2000, 182, 103-107.
    • (2000) Phys. Stat. Sol. (a) , vol.182 , pp. 103-107
    • Christophersen, M.1    Carstensen, J.2    Föll, H.3
  • 38
    • 0034505736 scopus 로고    scopus 로고
    • Crystal orientation dependence of macropore formation in n-type Si using organic electrolytes
    • Christophersen, M.; Carstensen, J.; Föll, H. Crystal orientation dependence of macropore formation in n-type Si using organic electrolytes. Phys. Stat. Sol. (a) 2000, 182, 601-606.
    • (2000) Phys. Stat. Sol. (a) , vol.182 , pp. 601-606
    • Christophersen, M.1    Carstensen, J.2    Föll, H.3
  • 39
    • 0037360443 scopus 로고    scopus 로고
    • Self-organized pore formation and open-loop-control in semiconductor etching
    • Claussen, J.C.; Carstensen, J.; Christophersen, M.; Langa, S.; Föll, H. Self-organized pore formation and open-loop-control in semiconductor etching. Chaos 2003, 13, 217-224.
    • (2003) Chaos , vol.13 , pp. 217-224
    • Claussen, J.C.1    Carstensen, J.2    Christophersen, M.3    Langa, S.4    Föll, H.5
  • 41
    • 0000689595 scopus 로고
    • Direct observation of porous SiC formed by anodization in HF
    • Shor, J.S.; Grimberg, I.; Weiss, B.-Z.; Kurtz, A.D. Direct observation of porous SiC formed by anodization in HF. Appl. Phys. Lett. 1993, 62, 2836-2837.
    • (1993) Appl. Phys. Lett. , vol.62 , pp. 2836-2837
    • Shor, J.S.1    Grimberg, I.2    Weiss, B.-Z.3    Kurtz, A.D.4
  • 42
    • 0001287587 scopus 로고    scopus 로고
    • Self-organization of pores in SiC/Si composite structure
    • Parkhutik, V.P. Self-organization of pores in SiC/Si composite structure. J. Appl. Phys. 1998, 83, 4647-4651.
    • (1998) J. Appl. Phys. , vol.83 , pp. 4647-4651
    • Parkhutik, V.P.1
  • 43
  • 44
    • 0034430434 scopus 로고    scopus 로고
    • Porous Anodic 4H-SiC: Thickness Dependent Anisotropy in Pore Propagation and Ellipsometric Characterization
    • Zangooie, S.; Arwin, H. Porous Anodic 4H-SiC: Thickness Dependent Anisotropy in Pore Propagation and Ellipsometric Characterization. Phys. Stat. Sol. (a) 2000, 182, 213-221.
    • (2000) Phys. Stat. Sol. (a) , vol.182 , pp. 213-221
    • Zangooie, S.1    Arwin, H.2
  • 46
    • 13444270826 scopus 로고    scopus 로고
    • Wet etching of GaN, AlN, and SiC: A Review
    • Zhuang, D.; Edgar, J.H. Wet etching of GaN, AlN, and SiC: A Review. Mat. Sci. Eng. 2005, 48, 1-46.
    • (2005) Mat. Sci. Eng. , vol.48 , pp. 1-46
    • Zhuang, D.1    Edgar, J.H.2
  • 52
  • 53
    • 38549086500 scopus 로고    scopus 로고
    • Electrochemical pore etching in n- and p-type Ge
    • Fang, C.; Carstensen, J.; Föll, H. Electrochemical pore etching in n- and p-type Ge. Sol. St. Phen. 2007, 121-123, 37-40.
    • (2007) Sol. St. Phen. , vol.121-123 , pp. 37-40
    • Fang, C.1    Carstensen, J.2    Föll, H.3
  • 56
    • 0000422660 scopus 로고    scopus 로고
    • Correlation between morphology and cathodoluminescence in porous GaP
    • Stevens-Kalceff, M.A.; Tiginyanu, I.M.; Langa, S.; Föll, H. Correlation between morphology and cathodoluminescence in porous GaP. J. Appl. Phys. 2001, 89, 2560-2564.
    • (2001) J. Appl. Phys. , vol.89 , pp. 2560-2564
    • Stevens-Kalceff, M.A.1    Tiginyanu, I.M.2    Langa, S.3    Föll, H.4
  • 57
    • 0035559361 scopus 로고    scopus 로고
    • Comparative SEM and Cathodoluminescence Microanalysis of Porous GaP Structures. MRS Proceedings Fall Meeting: Microcrystalline and Nanocrystalline Semiconductors
    • Boston, MA, USA, 26-30 November Section 5.31
    • Stevens-Kalceff, M.A.; Langa, S.; Tiginyanu, I.M.; Carstensen, J.; Christophersen, M.; Föll, H. Comparative SEM and Cathodoluminescence Microanalysis of Porous GaP Structures. In MRS Proceedings Fall Meeting: Microcrystalline and Nanocrystalline Semiconductors, Boston, MA, USA, 26-30 November 2001; Volume 638, Section 5.31.
    • (2001) , pp. 638
    • Stevens-Kalceff, M.A.1    Langa, S.2    Tiginyanu, I.M.3    Carstensen, J.4    Christophersen, M.5    Föll, H.6
  • 64
    • 0342298438 scopus 로고    scopus 로고
    • Crystal orientation dependence of macropore formation in n-Si with backside-illumination in HF-electrolyte
    • Rönnebeck, S.; Ottow, S.; Carstensen, J.; Föll, H. Crystal orientation dependence of macropore formation in n-Si with backside-illumination in HF-electrolyte. J. Porous Mat. 2000, 7, 353-357.
    • (2000) J. Porous Mat. , vol.7 , pp. 353-357
    • Rönnebeck, S.1    Ottow, S.2    Carstensen, J.3    Föll, H.4
  • 65
    • 63849160780 scopus 로고    scopus 로고
    • Growth modes of macropores in n-type silicon
    • Cojocaru, A.; Carstensen, J.; Föll, H. Growth modes of macropores in n-type silicon. ECS Trans. 2008, 16, 157-172.
    • (2008) ECS Trans , vol.16 , pp. 157-172
    • Cojocaru, A.1    Carstensen, J.2    Föll, H.3
  • 66
    • 0025386899 scopus 로고
    • Formation mechanism and properties of electrochemically etched trenches in n-type silicon
    • Lehmann, V.; Föll, H. Formation mechanism and properties of electrochemically etched trenches in n-type silicon. J. Electrochem. Soc. 1990, 137, 653-659.
    • (1990) J. Electrochem. Soc. , vol.137 , pp. 653-659
    • Lehmann, V.1    Föll, H.2
  • 67
    • 0141775174 scopus 로고
    • Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
    • Canham, L.T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl. Phys. Lett. 1990, 57, 1046-1049.
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 1046-1049
    • Canham, L.T.1
  • 68
    • 1842595981 scopus 로고
    • Porous silicon formation: A Quantum Wire Effect
    • Lehmann, V.; Gösele, U. Porous silicon formation: A Quantum Wire Effect. Appl. Phys. Lett. 1991, 58, 856-559.
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 856559
    • Lehmann, V.1    Gösele, U.2
  • 69
    • 84888869226 scopus 로고    scopus 로고
    • Etch, ET&TE; GmbH, Technology. (Accessed on 31 March 2010). Available online
    • Etch, ET&TE; GmbH, Technology. Available online: http://www.et-te.com (Accessed on 31 March 2010).
  • 70
    • 84888872030 scopus 로고    scopus 로고
    • (Accessed on 31 March 2010).Available online
    • Semitool. Available online: http://www.semitool.com (Accessed on 31 March 2010).
    • Semitool
  • 72
    • 63849168941 scopus 로고    scopus 로고
    • In situ assessment of macropore growth in low-doped n-type silicon
    • Carstensen, J.; Cojocaru, A.; Leisner, M.; Föll, H. In situ assessment of macropore growth in low-doped n-type silicon. ECS Trans. 2008, 16, 21-27.
    • (2008) ECS Trans , vol.16 , pp. 21-27
    • Carstensen, J.1    Cojocaru, A.2    Leisner, M.3    Föll, H.4
  • 74
    • 0020746811 scopus 로고
    • Anodic properties of n-Si and n-Ge electrodes in HF solution under illumination and in the dark
    • Matsumura, M.; Morrison, S.R. Anodic properties of n-Si and n-Ge electrodes in HF solution under illumination and in the dark. J. Electroanal. Chem. 1983, 147, 157-166.
    • (1983) J. Electroanal. Chem. , vol.147 , pp. 157-166
    • Matsumura, M.1    Morrison, S.R.2
  • 75
    • 74349115711 scopus 로고    scopus 로고
    • Unexpected Dissolution Process at Porous n-InP Electrodes
    • Santinacci, M.; Bouttemy, I.; Gerard, L.; Etcheberry, A. Unexpected Dissolution Process at Porous n-InP Electrodes. ECS Trans. 2009, 19, 313-320.
    • (2009) ECS Trans , vol.19 , pp. 313-320
    • Santinacci, M.1    Bouttemy, I.2    Gerard, L.3    Etcheberry, A.4
  • 76
    • 0002030768 scopus 로고    scopus 로고
    • Principles of Temporal and spatial pattern formation in electrochemical systems
    • Conway, B. E., Bockris, J. o'M., White, R. E., Eds. ; Plenum Press: New York, NY, USA
    • Krischer, K. Principles of Temporal and spatial pattern formation in electrochemical systems. In Modern Aspects of Electrochemistry; Conway, B.E., Bockris, J.o'M., White, R.E., Eds.; Plenum Press: New York, NY, USA, 1999; Volume 32, p. 1.
    • (1999) Modern Aspects of Electrochemistry , vol.32 , pp. 1
    • Krischer, K.1
  • 77
    • 0037914222 scopus 로고    scopus 로고
    • Nonlinear dynamics in electrochemical systems
    • Alkire, R. C., Kolb, D. M., Eds. ; Wiley-VCH: Weinheim, Germany
    • Krischer, K. Nonlinear dynamics in electrochemical systems. In Advances in Electrochemical Science and Engineering; Alkire, R.C., Kolb, D.M., Eds.; Wiley-VCH: Weinheim, Germany, 2003; Volume 8.
    • (2003) Advances in Electrochemical Science and Engineering , pp. 8
    • Krischer, K.1
  • 78
    • 0001150047 scopus 로고
    • The mechanism of the anodic oxidation of silicon in acidic fluoride solutions revisited
    • Gerischer, H.; Allongue, P.; Kieling, V.C. The mechanism of the anodic oxidation of silicon in acidic fluoride solutions revisited. Ber. Bunsenges. Phys. Chem. 1993, 97, 753-756.
    • (1993) Ber. Bunsenges. Phys. Chem. , vol.97 , pp. 753-756
    • Gerischer, H.1    Allongue, P.2    Kieling, V.C.3
  • 79
    • 0024013765 scopus 로고
    • Electrolytic growth and dissolution of oxide layers on silicon in aqueous solutions of fluorides
    • Gerischer, H.; Lübke, M. Electrolytic growth and dissolution of oxide layers on silicon in aqueous solutions of fluorides. Ber. Bunsenges. Phys. Chem. 1988, 92, 573-577.
    • (1988) Ber. Bunsenges. Phys. Chem. , vol.92 , pp. 573-577
    • Gerischer, H.1    Lübke, M.2
  • 81
    • 0036806734 scopus 로고    scopus 로고
    • Quantitative analysis of the morphology of macropores on low-doped p-Si What is the minimum resistivity
    • Chazalviel, J.-N.; Ozanam, F.; Gabouze, N.; Fellah, S.; Wehrspohn, R.B. Quantitative analysis of the morphology of macropores on low-doped p-Si. What is the minimum resistivity. J. Electrochem. Soc. 2002, 149, C511-C520.
    • (2002) J. Electrochem. Soc. , vol.149
    • Chazalviel, J.-N.1    Ozanam, F.2    Gabouze, N.3    Fellah, S.4    Wehrspohn, R.B.5
  • 82
    • 0020543767 scopus 로고
    • Electrodissolution and passivation phenomena in III-V Semiconducting compounds
    • Menezes, S.; Miller, B.; Bachmann, K.J. Electrodissolution and passivation phenomena in III-V Semiconducting compounds. J. Vac. Sci. Technol. B 1983, 1, 48-54.
    • (1983) J. Vac. Sci. Technol. B , vol.1 , pp. 48-54
    • Menezes, S.1    Miller, B.2    Bachmann, K.J.3
  • 83
    • 49849130153 scopus 로고
    • The anodic passivation on silicon single crystals
    • Moslavac, K.; Lovrecek, B. The anodic passivation on silicon single crystals. Electrochim. Acta 1969, 14, 373-376.
    • (1969) Electrochim. Acta , vol.14 , pp. 373-376
    • Moslavac, K.1    Lovrecek, B.2
  • 84
    • 0025521074 scopus 로고
    • Anisotropic etching of crystalline silicon in alkaline solutions I. Orientation dependence and behavior of passivation layers
    • Seidel, H.; Csepregi, L.; Heuberger, A.; Baumgärtel, H. Anisotropic etching of crystalline silicon in alkaline solutions. I. Orientation dependence and behavior of passivation layers. J. Electrochem. Soc. 1990, 137, 3612-3626.
    • (1990) J. Electrochem. Soc. , vol.137 , pp. 3612-3626
    • Seidel, H.1    Csepregi, L.2    Heuberger, A.3    Baumgärtel, H.4
  • 87
    • 0000994368 scopus 로고    scopus 로고
    • In situ infrared characterization of the silicon surface in hydrofluoric acid
    • Chazalviel, J.N.; Ozanam, F. In situ infrared characterization of the silicon surface in hydrofluoric acid. J. Appl. Phys. 1997, 81, 7684-7687.
    • (1997) J. Appl. Phys. , vol.81 , pp. 7684-7687
    • Chazalviel, J.N.1    Ozanam, F.2
  • 88
    • 0032027001 scopus 로고    scopus 로고
    • In situ infrared study of the oscillating anodic dissolution of silicon in fluoride electrolytes
    • Chazalviel, J.-N.; da Fonseca, C.; Ozanam, F. In situ infrared study of the oscillating anodic dissolution of silicon in fluoride electrolytes. J. Electrochem. Soc. 1998, 145, 964-974.
    • (1998) J. Electrochem. Soc. , vol.145 , pp. 964-974
    • Chazalviel, J.-N.1    da Fonseca, C.2    Ozanam, F.3
  • 89
    • 0035815094 scopus 로고    scopus 로고
    • New directions and challenges in modern electrochemistry: in situ infrared spectroscopy of the semiconductor - electrolyte interface
    • Chazalviel, J.N.; Erne, B.H.; Maroun, F.; Ozanam, F. New directions and challenges in modern electrochemistry: in situ infrared spectroscopy of the semiconductor - electrolyte interface. J. Electroanal. Chem. 2001, 50, 180-190.
    • (2001) J. Electroanal. Chem. , vol.50 , pp. 180-190
    • Chazalviel, J.N.1    Erne, B.H.2    Maroun, F.3    Ozanam, F.4
  • 90
    • 0035943553 scopus 로고    scopus 로고
    • In situ infrared spectroscopy of the semiconductor - electrolyte interface
    • Chazalviel, J.-N.; Erne, B.H.; Maroun, F.; Ozanam, F. In situ infrared spectroscopy of the semiconductor - electrolyte interface. J. Electroanal. Chem. 2001, 509, 108-118.
    • (2001) J. Electroanal. Chem. , vol.509 , pp. 108-118
    • Chazalviel, J.-N.1    Erne, B.H.2    Maroun, F.3    Ozanam, F.4
  • 91
    • 0000907436 scopus 로고
    • In situ fourier transform infrared investigations on the electrolytic hydrogenation of n-silicon(111)
    • Rappich, J.; Lewerenz, H.-J. In situ fourier transform infrared investigations on the electrolytic hydrogenation of n-silicon(111). J. Electrochem. Soc. 1995, 142, 1233-1237.
    • (1995) J. Electrochem. Soc. , vol.142 , pp. 1233-1237
    • Rappich, J.1    Lewerenz, H.-J.2
  • 92
    • 0031679350 scopus 로고    scopus 로고
    • Micromorphology changes of silicon oxide on Si(111) during current oscillations: a comparative in situ AFM and FTIR study
    • Nast, O.; Rauscher, S.; Jungblut, H.; Lewerenz, H.-J. Micromorphology changes of silicon oxide on Si(111) during current oscillations: a comparative in situ AFM and FTIR study. J. Electroanal. Chem. 1998, 442, 169-174.
    • (1998) J. Electroanal. Chem. , vol.442 , pp. 169-174
    • Nast, O.1    Rauscher, S.2    Jungblut, H.3    Lewerenz, H.-J.4
  • 94
    • 0033686370 scopus 로고    scopus 로고
    • A model for electrochemical oscillations at the Si-electrolyte contact Part I. Theoretical development
    • Grzanna, J.; Jungblut, H.; Lewerenz, H.J. A model for electrochemical oscillations at the Si-electrolyte contact, Part I. Theoretical development. J. Electroanal. Chem. 2000, 486, 181-189.
    • (2000) J. Electroanal. Chem. , vol.486 , pp. 181-189
    • Grzanna, J.1    Jungblut, H.2    Lewerenz, H.J.3
  • 95
    • 0033705247 scopus 로고    scopus 로고
    • A model for electrochemical oscillations at the Si-electrolyte contact Part II. Simulations and experimental results
    • Grzanna, J.; Jungblut, H.; Lewerenz, H.J. A model for electrochemical oscillations at the Si-electrolyte contact, Part II. Simulations and experimental results. J. Electroanal. Chem. 2000, 486, 190-203.
    • (2000) J. Electroanal. Chem. , vol.486 , pp. 190-203
    • Grzanna, J.1    Jungblut, H.2    Lewerenz, H.J.3
  • 96
    • 34547205208 scopus 로고    scopus 로고
    • Nano- and macropores in the model for current oscillations at the Si/electrolyte contact
    • Grzanna, J.; Jungblut, H.; Lewerenz, H.J. Nano- and macropores in the model for current oscillations at the Si/electrolyte contact. Phys. Stat. Sol. (a) 2007, 204, 1245-1249.
    • (2007) Phys. Stat. Sol. (a) , vol.204 , pp. 1245-1249
    • Grzanna, J.1    Jungblut, H.2    Lewerenz, H.J.3
  • 97
    • 63849272895 scopus 로고    scopus 로고
    • Model for current oscillations at the Si/electrolyte contact: Extension to Spatial Resolution
    • Grzanna, J.; Notz, T.; Lewerenz, H.J. Model for current oscillations at the Si/electrolyte contact: Extension to Spatial Resolution. ECS Trans. 2008, 16, 173-180.
    • (2008) ECS Trans , vol.16 , pp. 173-180
    • Grzanna, J.1    Notz, T.2    Lewerenz, H.J.3
  • 99
    • 0026912070 scopus 로고
    • A theory for resonant response of an electrochemical system: Self-Oscillating Domains Hidden Oscillation and Synchronization Impedance
    • Chazalviel, J.-N.; Ozanam, F. A theory for resonant response of an electrochemical system: Self-Oscillating Domains, Hidden Oscillation and Synchronization Impedance. J. Electrochem. Soc. 1992, 139, 2501-2508.
    • (1992) J. Electrochem. Soc. , vol.139 , pp. 2501-2508
    • Chazalviel, J.-N.1    Ozanam, F.2
  • 100
    • 0042510774 scopus 로고
    • Microscopic, self-oscillating domains at the silicon surface during its anodic dissolution in a fluoride electrolyte
    • Ozanam, F.; Blanchard, N.; Chazalviel, J.-N. Microscopic, self-oscillating domains at the silicon surface during its anodic dissolution in a fluoride electrolyte. Electrochim. Acta 1993, 38, 1627-1630.
    • (1993) Electrochim. Acta , vol.38 , pp. 1627-1630
    • Ozanam, F.1    Blanchard, N.2    Chazalviel, J.-N.3
  • 101
    • 21144444240 scopus 로고    scopus 로고
    • Oscillations and other dynamic instabilities
    • Vielstich, W., Lamm, A., Gasteiger, H., Eds. ; John Wiley & Sons, Ltd: Hoboken, NJ, USA
    • Krischer, K.; Varela, H. Oscillations and other dynamic instabilities. In Handbook of Fuel Cells; Vielstich, W., Lamm, A., Gasteiger, H., Eds.; John Wiley & Sons, Ltd: Hoboken, NJ, USA, 2003; Volume 2, p. 679.
    • (2003) Handbook of Fuel Cells , vol.2 , pp. 679
    • Krischer, K.1    Varela, H.2
  • 103
    • 25444460864 scopus 로고    scopus 로고
    • Monte Carlo simulation of electrochemical oscillations in the electropolishing regime
    • Foca, E.; Carstensen, J.; Föll, H. Monte Carlo simulation of electrochemical oscillations in the electropolishing regime. Phys. Stat. Sol. (a) 2005, 202, 1524-1528.
    • (2005) Phys. Stat. Sol. (a) , vol.202 , pp. 1524-1528
    • Foca, E.1    Carstensen, J.2    Föll, H.3
  • 104
    • 34247118370 scopus 로고    scopus 로고
    • Modeling electrochemical current and potential oscillations at the Si electrode
    • Foca, E.; Carstensen, J.; Föll, H. Modeling electrochemical current and potential oscillations at the Si electrode. J. Electroanal. Chem. 2007, 603, 175-202.
    • (2007) J. Electroanal. Chem. , vol.603 , pp. 175-202
    • Foca, E.1    Carstensen, J.2    Föll, H.3
  • 112
    • 84888858659 scopus 로고    scopus 로고
    • Porous and nanoporous semiconductors and emerging applications
    • Lu, S. W., Hahn, H., Weissmuller, J., Gole, J. L., Eds. ; Curran Associates, Inc. : Warrendale, PA, USA R12 1- R12. 1
    • Föll, H.; Carstensen, J.; Frey, S. Porous and nanoporous semiconductors and emerging applications. In Sensor, and Gas Separation Applications; Lu, S.W., Hahn, H., Weissmuller, J., Gole, J.L., Eds.; Curran Associates, Inc.: Warrendale, PA, USA, 2005; R12.1- R12.1.13.
    • (2005) Sensor, and Gas Separation Applications , pp. 13
    • Föll, H.1    Carstensen, J.2    Frey, S.3
  • 114
    • 74349119071 scopus 로고    scopus 로고
    • Growth mode transition of crysto and curro pores in III-V semiconductors
    • Föll, H.; Leisner, M.; Carstensen, J.; Schauer, P. Growth mode transition of crysto and curro pores in III-V semiconductors. ECS Trans. 2009, 19, 329-345.
    • (2009) ECS Trans , vol.19 , pp. 329-345
    • Föll, H.1    Leisner, M.2    Carstensen, J.3    Schauer, P.4
  • 116
    • 0038469969 scopus 로고    scopus 로고
    • Organic and aqueous electrolytes used for etching macro- and mesoporous silicon
    • Christophersen, M.; Carstensen, J.; Voigt, K.; Föll, H. Organic and aqueous electrolytes used for etching macro- and mesoporous silicon. Phys. Stat. Sol. (a) 2003, 197, 34-37.
    • (2003) Phys. Stat. Sol. (a) , vol.197 , pp. 34-37
    • Christophersen, M.1    Carstensen, J.2    Voigt, K.3    Föll, H.4
  • 117
    • 62249146876 scopus 로고    scopus 로고
    • Experimental study of macropore formation in p-type silicon in a fluoride solution and the transition between macropore formation and electropolishing
    • Slimani, A.; Iratni, A.; Chazalviel, J.-N.; Gabouze, N.; Ozanam, F. Experimental study of macropore formation in p-type silicon in a fluoride solution and the transition between macropore formation and electropolishing. Electrochim. Acta 2009, 54, 3139-3144.
    • (2009) Electrochim. Acta , vol.54 , pp. 3139-3144
    • Slimani, A.1    Iratni, A.2    Chazalviel, J.-N.3    Gabouze, N.4    Ozanam, F.5
  • 118
    • 63849109778 scopus 로고    scopus 로고
    • Are the oscillations during the anodic dissolution of Si in dilute fluoride electrolyte damped or sustained?
    • Chazalviel, J.-N.; Ozanam, F. Are the oscillations during the anodic dissolution of Si in dilute fluoride electrolyte damped or sustained? ECS Trans. 2008, 16, 189-194.
    • (2008) ECS Trans , vol.16 , pp. 189-194
    • Chazalviel, J.-N.1    Ozanam, F.2
  • 122
    • 70949092920 scopus 로고    scopus 로고
    • Transition metals specifically electrodeposited into porous silicon
    • Rumpf, K.; Granitzer, P.; Krenn, H. Transition metals specifically electrodeposited into porous silicon. Phys. Stat. Sol. 2009, 206, 1592-1595.
    • (2009) Phys. Stat. Sol. , vol.206 , pp. 1592-1595
    • Rumpf, K.1    Granitzer, P.2    Krenn, H.3
  • 123
    • 34447103701 scopus 로고    scopus 로고
    • Fast speed pore formation via strong oxidizers
    • Bao, X.Q.; Jiao, J.W.; Zhou, J.; Wang, Y.L. Fast speed pore formation via strong oxidizers. Electrochim. Acta 2007, 52, 6728-6733.
    • (2007) Electrochim. Acta , vol.52 , pp. 6728-6733
    • Bao, X.Q.1    Jiao, J.W.2    Zhou, J.3    Wang, Y.L.4
  • 125
    • 0344983756 scopus 로고    scopus 로고
    • Electrochemical formation of porous superlattices on n-type (100) InP
    • Tsuchiya, H.; Hueppe, M.; Djenizian, T.; Schmuki, P. Electrochemical formation of porous superlattices on n-type (100) InP. Surf. Sci. 2003, 547, 268-274.
    • (2003) Surf. Sci. , vol.547 , pp. 268-274
    • Tsuchiya, H.1    Hueppe, M.2    Djenizian, T.3    Schmuki, P.4
  • 126
    • 29744470641 scopus 로고    scopus 로고
    • Morphology, interface polarity and branching of electrochemically etched pores in InP
    • Spiecker, E.; Rudel, M.; Jäger, W.; Leisner, M.; Föll, H. Morphology, interface polarity and branching of electrochemically etched pores in InP. Phys. Stat. Sol. (a) 2005, 202, 2950-2962.
    • (2005) Phys. Stat. Sol. (a) , vol.202 , pp. 2950-2962
    • Spiecker, E.1    Rudel, M.2    Jäger, W.3    Leisner, M.4    Föll, H.5
  • 129
    • 0842287240 scopus 로고
    • Porous silicon: quantum sponge structures grown via a self-adjusting etching process
    • Lehmann, V.; Gösele, U. Porous silicon: quantum sponge structures grown via a self-adjusting etching process. Adv. Mater. 1992, 4, 114-116.
    • (1992) Adv. Mater. , vol.4 , pp. 114-116
    • Lehmann, V.1    Gösele, U.2
  • 130
    • 0032181099 scopus 로고    scopus 로고
    • A model for current oscillations in the Si-HF system based on a quantitative analysis of current transients
    • Carstensen, J.; Prange, R.; Popkirov, G.S.; Föll, H. A model for current oscillations in the Si-HF system based on a quantitative analysis of current transients. Appl. Phys. A 1998, 67, 459-467.
    • (1998) Appl. Phys. A , vol.67 , pp. 459-467
    • Carstensen, J.1    Prange, R.2    Popkirov, G.S.3    Föll, H.4
  • 132
    • 0034430053 scopus 로고    scopus 로고
    • Parameter dependence of pore formation in silicon within the model of local current bursts
    • Carstensen, J.; Christophersen, M.; Hasse, G.; Föll, H. Parameter dependence of pore formation in silicon within the model of local current bursts. Phys. Stat. Sol. (a) 2000, 182, 63-69.
    • (2000) Phys. Stat. Sol. (a) , vol.182 , pp. 63-69
    • Carstensen, J.1    Christophersen, M.2    Hasse, G.3    Föll, H.4
  • 133
    • 70949083668 scopus 로고    scopus 로고
    • Preparation and optical properties of porous silicon rugate-type multilayers with different pore sizes
    • Salem, M.S.; Sailor, M.J.; Fukami, K.; Sakka, T.; Ogata, Y.H. Preparation and optical properties of porous silicon rugate-type multilayers with different pore sizes. Phys. Stat. Sol. (c) 2009, 6, 1620-1623.
    • (2009) Phys. Stat. Sol. (c) , vol.6 , pp. 1620-1623
    • Salem, M.S.1    Sailor, M.J.2    Fukami, K.3    Sakka, T.4    Ogata, Y.H.5
  • 134
    • 35148883045 scopus 로고    scopus 로고
    • Macropore density as a function of HF-concentration and bias
    • Bao, X.Q.; Lin, J.L.; Jiao, J.W.; Wang, Y.L. Macropore density as a function of HF-concentration and bias. Electrochim. Acta 2007, 53, 823-828.
    • (2007) Electrochim. Acta , vol.53 , pp. 823-828
    • Bao, X.Q.1    Lin, J.L.2    Jiao, J.W.3    Wang, Y.L.4
  • 135
    • 41349093745 scopus 로고    scopus 로고
    • FFT impedance spectroscopy analysis of the growth of anodic oxides on (100) p-Si for various solvents
    • Leisner, M.; Carstensen, J.; Föll, H. FFT impedance spectroscopy analysis of the growth of anodic oxides on (100) p-Si for various solvents. J. Electroanal. Chem. 2008, 615, 124-134.
    • (2008) J. Electroanal. Chem. , vol.615 , pp. 124-134
    • Leisner, M.1    Carstensen, J.2    Föll, H.3
  • 136
    • 74349088536 scopus 로고    scopus 로고
    • Simulating crystallographic pore growth on III-V semiconductors
    • Leisner, M.; Carstensen, J.; Föll, H. Simulating crystallographic pore growth on III-V semiconductors. ECS Trans. 2009, 19, 321-328.
    • (2009) ECS Trans , vol.19 , pp. 321-328
    • Leisner, M.1    Carstensen, J.2    Föll, H.3
  • 138
    • 62249222501 scopus 로고    scopus 로고
    • Theoretical modelling of the I-V characteristics of p-type silicon in fluoride electrolyte in the first electropolishing plateau
    • Cheggoua, R.; Kadouna, A.; Gabouzeb, N.; Ozanam, F.; Chazalviel, J.-N. Theoretical modelling of the I-V characteristics of p-type silicon in fluoride electrolyte in the first electropolishing plateau. Electrochim. Acta 2009, 54, 3053-3058.
    • (2009) Electrochim. Acta , vol.54 , pp. 3053-3058
    • Cheggoua, R.1    Kadouna, A.2    Gabouzeb, N.3    Ozanam, F.4    Chazalviel, J.-N.5
  • 139
    • 20544471372 scopus 로고    scopus 로고
    • A self-consistent theoretical model for macropore growth in n-type silicon
    • Barillaro, G.; Pieri, F. A self-consistent theoretical model for macropore growth in n-type silicon. J. Appl. Phys. 2005, 97, 116105.
    • (2005) J. Appl. Phys. , vol.97 , pp. 116105
    • Barillaro, G.1    Pieri, F.2
  • 141
    • 33749670684 scopus 로고    scopus 로고
    • Anodic growth of self-organized anodic TiO2 nanotubes in viscous electrolytes
    • Macak, J.M.; Schmuki, P. Anodic growth of self-organized anodic TiO2 nanotubes in viscous electrolytes. Electrochim. Acta 2006, 52, 1258-1264.
    • (2006) Electrochim. Acta , vol.52 , pp. 1258-1264
    • Macak, J.M.1    Schmuki, P.2
  • 142
    • 0025507120 scopus 로고
    • Impedance studies at semiconductor electrodes: clasical and more exotic techniques
    • Chazalviel, J.-N. Impedance studies at semiconductor electrodes: clasical and more exotic techniques. Electrochim. Acta 1990, 35, 1545-1552.
    • (1990) Electrochim. Acta , vol.35 , pp. 1545-1552
    • Chazalviel, J.-N.1
  • 143
    • 0025471728 scopus 로고
    • The anodic dissolution of silicon in HF solutions
    • Searson, P.C.; Zhang, X.G. The anodic dissolution of silicon in HF solutions. J. Electrochem. Soc. 1990, 137, 2539-2548.
    • (1990) J. Electrochem. Soc. , vol.137 , pp. 2539-2548
    • Searson, P.C.1    Zhang, X.G.2
  • 144
    • 0026916313 scopus 로고
    • Resonant and nonresonant behavior of the anodic dissolution of silicon in fluoride media: An impedance study
    • Ozanam, F.; Chazalviel, J.-N.; Radi, A.; Etman, M. Resonant and nonresonant behavior of the anodic dissolution of silicon in fluoride media: An impedance study. J. Electrochem. Soc. 1992, 139, 2491-2501.
    • (1992) J. Electrochem. Soc. , vol.139 , pp. 2491-2501
    • Ozanam, F.1    Chazalviel, J.-N.2    Radi, A.3    Etman, M.4
  • 145
    • 0028385837 scopus 로고
    • On the electrical impedance due to the anodic dissolution of silicon in HF solutions
    • Vanmaekelbergh, D.; Searson, P.C. On the electrical impedance due to the anodic dissolution of silicon in HF solutions. J. Electrochem. Soc. 1994, 141, 697-702.
    • (1994) J. Electrochem. Soc. , vol.141 , pp. 697-702
    • Vanmaekelbergh, D.1    Searson, P.C.2
  • 147
    • 0022816423 scopus 로고
    • Impendance spectra of p-type porous Si-electrolyte interfaces
    • Koshida, N.; Naggsu, M.; Echizenya, K.; Kiuchi, Y. Impendance spectra of p-type porous Si-electrolyte interfaces. J. Electrochem. Soc. 1986, 133, 2283-2291.
    • (1986) J. Electrochem. Soc. , vol.133 , pp. 2283-2291
    • Koshida, N.1    Naggsu, M.2    Echizenya, K.3    Kiuchi, Y.4
  • 148
    • 0033902694 scopus 로고    scopus 로고
    • Electrodissolution of Ti and p-Si in acidic fluoride media: formation ratio of oxide layers from electrochemical impedance spectroscopy
    • Frateur, I.; Cattarin, S.; Musiani, M.; Tribollet, B. Electrodissolution of Ti and p-Si in acidic fluoride media: formation ratio of oxide layers from electrochemical impedance spectroscopy. J. Electroanal. Chem. 2000, 482, 202-210.
    • (2000) J. Electroanal. Chem. , vol.482 , pp. 202-210
    • Frateur, I.1    Cattarin, S.2    Musiani, M.3    Tribollet, B.4
  • 151
    • 84888867442 scopus 로고    scopus 로고
    • CELLO measurements with FFT impedance analysis: Drastic Increase of Measurement Speed for Analysis of Local Solar Cell Defects
    • Valencia, Spain, 1-5 September 1AO.6.1 2008;
    • Carstensen, J.; Schütt, A.; Föll, H. CELLO measurements with FFT impedance analysis: Drastic Increase of Measurement Speed for Analysis of Local Solar Cell Defects. In Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 1-5 September 2008; 1AO.6.1.
    • Proceedings of the 23rd European Photovoltaic Solar Energy Conference
    • Carstensen, J.1    Schütt, A.2    Föll, H.3
  • 152
    • 84876671769 scopus 로고    scopus 로고
    • CELLO FFT impedance analysis as a routine tool for identifying various defect types on crystalline silicon solar cells
    • Hamburg, Germany, 21-25 September; 1AO.4.5
    • Carstensen, J.; Schütt, A.; Föll, H. CELLO FFT impedance analysis as a routine tool for identifying various defect types on crystalline silicon solar cells. In Proceedings of the 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, 21-25 September 2009; 1AO.4.5.
    • (2009) Proceedings of the 24th European Photovoltaic Solar Energy Conference
    • Carstensen, J.1    Schütt, A.2    Föll, H.3
  • 153
    • 70949084923 scopus 로고    scopus 로고
    • Pore growth on n-InP investigated by in situ FFT impedance spectroscopy
    • Leisner, M.; Carstensen, J.; Cojocaru, A.; Föll, H. Pore growth on n-InP investigated by in situ FFT impedance spectroscopy. Phys. Stat. Sol. (c) 2009, 206, 1566-1571.
    • (2009) Phys. Stat. Sol. (c) , vol.206 , pp. 1566-1571
    • Leisner, M.1    Carstensen, J.2    Cojocaru, A.3    Föll, H.4
  • 154
    • 63849276678 scopus 로고    scopus 로고
    • In situ FFT impedance spectroscopy during the growth of crystallographically oriented pores in InP
    • Leisner, M.; Carstensen, J.; Cojocaru, A.; Föll, H. In situ FFT impedance spectroscopy during the growth of crystallographically oriented pores in InP. ECS Trans. 2008, 16, 133-142.
    • (2008) ECS Trans , vol.16 , pp. 133-142
    • Leisner, M.1    Carstensen, J.2    Cojocaru, A.3    Föll, H.4
  • 155
    • 74349127057 scopus 로고    scopus 로고
    • Dynamics of macropore growth in n-type silicon investigated by FFT in situ impedance analysis
    • Carstensen, J.; Cojocaru, A.; Leisner, M.; Föll, H. Dynamics of macropore growth in n-type silicon investigated by FFT in situ impedance analysis. ECS Trans. 2009, 19, 355-361.
    • (2009) ECS Trans , vol.19 , pp. 355-361
    • Carstensen, J.1    Cojocaru, A.2    Leisner, M.3    Föll, H.4
  • 156
    • 0026284166 scopus 로고
    • Mechanism of pore formation on n-type silicon
    • Zhang, X.G. Mechanism of pore formation on n-type silicon. J. Electrochem. Soc. 1991, 138, 3750-3756.
    • (1991) J. Electrochem. Soc. , vol.138 , pp. 3750-3756
    • Zhang, X.G.1
  • 157
    • 0343292296 scopus 로고
    • Avalanche breakdown voltage for III-V semiconductors
    • Hauser, J.R. Avalanche breakdown voltage for III-V semiconductors. Appl. Phys. Lett. 1978, 33, 351-356.
    • (1978) Appl. Phys. Lett. , vol.33 , pp. 351-356
    • Hauser, J.R.1
  • 158
    • 0034707031 scopus 로고    scopus 로고
    • Gaining light from silicon
    • Canham, L.T. Gaining light from silicon. Nature 2000, 408, 411-412.
    • (2000) Nature , vol.408 , pp. 411-412
    • Canham, L.T.1
  • 159
    • 0027590075 scopus 로고
    • The photoelectrochemical oxidation of n-Si in anhydrous HF-Acetonitrile
    • Propst, E.; Kohl, P.A. The photoelectrochemical oxidation of n-Si in anhydrous HF-Acetonitrile. J. Electrochem. Soc. 1993, 140, L78-L80.
    • (1993) J. Electrochem. Soc. , vol.140
    • Propst, E.1    Kohl, P.A.2
  • 160
    • 0021393308 scopus 로고
    • FIPOS (Full Isolation by Porous Oxidized Silicon) Technology and Its Application to LSIs
    • Imai, K.; Unno, H. FIPOS (Full Isolation by Porous Oxidized. Silicon) Technology and Its Application to LSIs. IEEE Trans. Electron Devices. 1984, 31, 297-302.
    • (1984) IEEE Trans. Electron Devices. , vol.31 , pp. 297-302
    • Imai, K.1    Unno, H.2
  • 161
    • 0019058067 scopus 로고
    • Anodic etching of defects in p-type silicon
    • Föll, H. Anodic etching of defects in p-type silicon. J. Electrochem. Soc. 1980, 127, 1925-1931.
    • (1980) J. Electrochem. Soc. , vol.127 , pp. 1925-1931
    • Föll, H.1
  • 162
    • 33646084724 scopus 로고
    • Anodic etching of p-type silicon as a method for discriminating electrically active and inactive defects
    • Föll, H. Anodic etching of p-type silicon as a method for discriminating electrically active and inactive defects. Appl. Phys. Lett. 1980, 37, 316-318.
    • (1980) Appl. Phys. Lett. , vol.37 , pp. 316-318
    • Föll, H.1
  • 163
    • 63849256311 scopus 로고    scopus 로고
    • Volker Lehmann: An unconventional scientist
    • Gösele, U.; Föll, H. Volker Lehmann: An unconventional scientist. ECS Trans. 2008, 16, 7-20.
    • (2008) ECS Trans , vol.16 , pp. 7-20
    • Gösele, U.1    Föll, H.2
  • 165
    • 0010270266 scopus 로고
    • Mapping of defect related bulk and surface properties with the ELYMAT technique
    • Huff, H.R., Bergholz, W., Sumino, K., Eds.; Electrochemical Society: San Francisco, CA, USA
    • Carstensen, J.; Lippik, W.; Föll, H. Mapping of defect related bulk and surface properties with the ELYMAT technique. In Semiconductor Silicon; Huff, H.R., Bergholz, W., Sumino, K., Eds.; Electrochemical Society: San Francisco, CA, USA, 1994; p. 1105.
    • (1994) Semiconductor Silicon , pp. 1105
    • Carstensen, J.1    Lippik, W.2    Föll, H.3
  • 166
    • 17044457484 scopus 로고
    • Mapping of defect related silicon properties with the ELYMAT technique in three dimensions
    • Carstensen, J.; Lippik, W.; Föll, H. Mapping of defect related silicon properties with the ELYMAT technique in three dimensions. Mater. Sci. Forum 1995, 173, 159-164.
    • (1995) Mater. Sci. Forum , vol.173 , pp. 159-164
    • Carstensen, J.1    Lippik, W.2    Föll, H.3
  • 167
    • 33845994417 scopus 로고    scopus 로고
    • Porous and nanoporous semiconductors and emerging applications
    • Article ID
    • Föll, H.; Carstensen, J.; Frey, S. Porous and nanoporous semiconductors and emerging applications. J. Nanomater 2006, Article ID 91635.
    • (2006) J. Nanomater , pp. 91635
    • Föll, H.1    Carstensen, J.2    Frey, S.3
  • 168
    • 0033687514 scopus 로고    scopus 로고
    • Chemical and biological applications of porous silicon technology
    • Stewart, M.P.; Buriak, J.M. Chemical and biological applications of porous silicon technology. Adv. Mat. 2000, 12, 859-869.
    • (2000) Adv. Mat. , vol.12 , pp. 859-869
    • Stewart, M.P.1    Buriak, J.M.2
  • 169
    • 0038810357 scopus 로고    scopus 로고
    • Structuring of macroporous silicon for applications as photonic crystals
    • Müller, F.; Birner, A.; Gösele, U.; Lehmann, V.; Ottow, S.; Föll, H. Structuring of macroporous silicon for applications as photonic crystals. J. Por. Mat. 2000, 7, 201-204.
    • (2000) J. Por. Mat. , vol.7 , pp. 201-204
    • Müller, F.1    Birner, A.2    Gösele, U.3    Lehmann, V.4    Ottow, S.5    Föll, H.6
  • 170
    • 29244485484 scopus 로고    scopus 로고
    • Porous silicon filters for low-temperature far IR applications
    • Kochergin, V.; Sanghavi, M.; Swinehart, P.R. Porous silicon filters for low-temperature far IR applications. Proc. SPIE 2005, 5883, 184-191.
    • (2005) Proc. SPIE , vol.5883 , pp. 184-191
    • Kochergin, V.1    Sanghavi, M.2    Swinehart, P.R.3
  • 172
    • 42549161786 scopus 로고    scopus 로고
    • Commercial applications of porous Si: Optical Filters And Components
    • Kochergin, V.; Föll, H. Commercial applications of porous Si: Optical Filters And Components. Phys. Stat. Sol. (c) 2007, 4, 1933-1940.
    • (2007) Phys. Stat. Sol. (c) , vol.4 , pp. 1933-1940
    • Kochergin, V.1    Föll, H.2
  • 173
    • 0012283311 scopus 로고    scopus 로고
    • Electrochemically prepared pore arrays for photonic crystal applications
    • Wehrspohn, R.B.; Schilling, J. Electrochemically prepared pore arrays for photonic crystal applications. MRS Bull. 2001, 26, 623-626.
    • (2001) MRS Bull , vol.26 , pp. 623-626
    • Wehrspohn, R.B.1    Schilling, J.2
  • 178
    • 70949091482 scopus 로고    scopus 로고
    • Chemical etching of Si by Ag nanocatalysts in HF-H2O2: Application to Multicrystalline Si Solar Cell Texturisation
    • Bastide, S.; Quang, N.L.; Monna, R.; Levy-Clément, C. Chemical etching of Si by Ag nanocatalysts in HF-H2O2: Application to Multicrystalline Si Solar Cell Texturisation. Phys. Stat. Sol. (c) 2009, 206, 1536-1540.
    • (2009) Phys. Stat. Sol. (c) , vol.206 , pp. 1536-1540
    • Bastide, S.1    Quang, N.L.2    Monna, R.3    Levy-Clément, C.4
  • 179
    • 27344453176 scopus 로고    scopus 로고
    • Porous silicon formation by HF chemical etching for antireflection of solar cells
    • Yae, S.; Tanaka, H.; Kobayashi, T.; Fukumuro, N.; Matsuda, H. Porous silicon formation by HF chemical etching for antireflection of solar cells. Phys. Stat. Sol. (c) 2005, 2, 3476-3480.
    • (2005) Phys. Stat. Sol. (c) , vol.2 , pp. 3476-3480
    • Yae, S.1    Tanaka, H.2    Kobayashi, T.3    Fukumuro, N.4    Matsuda, H.5
  • 180
    • 0035388567 scopus 로고    scopus 로고
    • Review of layer transfer processes for crystalline thin-film silicon solar cells
    • Brendel, R. Review of layer transfer processes for crystalline thin-film silicon solar cells. Jpn. J. Appl. Phys. Part 1 2001, 40, 4431-4439.
    • (2001) Jpn. J. Appl. Phys. Part , vol.1 , pp. 4431-4439
    • Brendel, R.1
  • 181
    • 0035816993 scopus 로고    scopus 로고
    • Strong explosive interaction of hydrogenated porous silicon with oxygen at cryogenic temperatures
    • Kovalev, D.; Timoshenko, V.Yu.; Künzner, N.; Gross, E.; Koch, F. Strong explosive interaction of hydrogenated porous silicon with oxygen at cryogenic temperatures. Phys. Rev. Lett. 2001, 87, 068301.
    • (2001) Phys. Rev. Lett. , vol.87 , pp. 068301
    • Kovalev, D.1    Timoshenko, V.Y.2    Künzner, N.3    Gross, E.4    Koch, F.5
  • 182
    • 0037016611 scopus 로고    scopus 로고
    • Explosive nanocrystalline porous silicon and its use in atomic emission spectroscopy
    • Mikulec, F.V.; Kirtland, J.D.; Sailor, M.J. Explosive nanocrystalline porous silicon and its use in atomic emission spectroscopy. Adv. Mater. 2002, 14, 38-41.
    • (2002) Adv. Mater. , vol.14 , pp. 38-41
    • Mikulec, F.V.1    Kirtland, J.D.2    Sailor, M.J.3
  • 184
    • 70949091787 scopus 로고
    • Investgating nanoporous silicon explosive devices
    • Plessis, M. Investgating nanoporous silicon explosive devices. Phys. Stat. Sol. (c) 2009, 206, 1763.
    • (1763) Phys. Stat. Sol. (c) , vol.2009
    • Plessis, M.1
  • 185
    • 0036144487 scopus 로고    scopus 로고
    • MEMS techniques applied to the fabrication of anti-scatter grids for X-ray imaging
    • Lehmann, V.; Rönnebeck, S. MEMS techniques applied to the fabrication of anti-scatter grids for X-ray imaging. Sens. Actuator. A 2001, 95, 202-207.
    • (2001) Sens. Actuator. A , vol.95 , pp. 202-207
    • Lehmann, V.1    Rönnebeck, S.2
  • 188
    • 25444486133 scopus 로고    scopus 로고
    • Ab initio study of birefringent porous silicon
    • Bonder, Y.; Wang, C. Ab initio study of birefringent porous silicon. Phys. Stat. Sol. (a) 2005, 202, 1552-1556.
    • (2005) Phys. Stat. Sol. (a) , vol.202 , pp. 1552-1556
    • Bonder, Y.1    Wang, C.2
  • 189
    • 0343496773 scopus 로고    scopus 로고
    • Novel C-MOS compatible monolithic silicon gas flow sensor with porous silicon thermal isolation
    • Kaltsas, G.; Nassiopoulou, A.G. Novel C-MOS compatible monolithic silicon gas flow sensor with porous silicon thermal isolation. Sens. Actuat. A 1999, 76, 133-138.
    • (1999) Sens. Actuat. A , vol.76 , pp. 133-138
    • Kaltsas, G.1    Nassiopoulou, A.G.2
  • 190
    • 0032677979 scopus 로고    scopus 로고
    • Thick oxidised porous silicon layers for the design of a biomedical thermal conductivity microsensor
    • Roussel, Ph.; Lysenko, V.; Remaki, B.; Delhomme, G.; Dittmar, A.; Barbier, D. Thick oxidised porous silicon layers for the design of a biomedical thermal conductivity microsensor. Sens. Actuat. 1999, 74, 100-103.
    • (1999) Sens. Actuat. , vol.74 , pp. 100-103
    • Roussel, P.1    Lysenko, V.2    Remaki, B.3    Delhomme, G.4    Dittmar, A.5    Barbier, D.6
  • 191
    • 34547398454 scopus 로고    scopus 로고
    • 1D partially oxidized porous silicon photonic crystal reflector for mid-infrared application
    • Wang, Z.; Zhang, J.; Xu, S.; Wang, L.; Cao, Z.; Zhan, P.; Wang, Z. 1D partially oxidized porous silicon photonic crystal reflector for mid-infrared application. J. Phys. D: Appl. Phys. 2007, 40, 4482-4484.
    • (2007) J. Phys. D: Appl. Phys. , vol.40 , pp. 4482-4484
    • Wang, Z.1    Zhang, J.2    Xu, S.3    Wang, L.4    Cao, Z.5    Zhan, P.6    Wang, Z.7
  • 192
    • 0033606985 scopus 로고    scopus 로고
    • Thermally induced ultrasonic emission from porous silicon
    • Shinoda, H.; Nakajima, T.; Ueno, K.; Koshida, N. Thermally induced ultrasonic emission from porous silicon. Nature 1999, 400, 853-855.
    • (1999) Nature , vol.400 , pp. 853-855
    • Shinoda, H.1    Nakajima, T.2    Ueno, K.3    Koshida, N.4
  • 194
    • 61649090471 scopus 로고    scopus 로고
    • Nanoporous Si as an Efficient Thermoelectric Material
    • Lee, J.; Galli, G.A.; Grossman, J.C. Nanoporous Si as an Efficient Thermoelectric Material. Nano Lett. 2008, 8, 3750-3754.
    • (2008) Nano Lett , vol.8 , pp. 3750-3754
    • Lee, J.1    Galli, G.A.2    Grossman, J.C.3
  • 195
    • 78049370226 scopus 로고    scopus 로고
    • Porous Thermoelectric Materials
    • Goldsmid, H.J. Porous Thermoelectric Materials. Materials 2009, 2, 903-910.
    • (2009) Materials , vol.2 , pp. 903-910
    • Goldsmid, H.J.1
  • 197
    • 34547172803 scopus 로고    scopus 로고
    • A porous silicon based particle filter for microsystems
    • Wallner, J.Z.; Bergstrom, P.L. A porous silicon based particle filter for microsystems. Phys. Stat. Sol. (a) 2007, 204, 1469-1473.
    • (2007) Phys. Stat. Sol. (a) , vol.204 , pp. 1469-1473
    • Wallner, J.Z.1    Bergstrom, P.L.2
  • 199
    • 70949092432 scopus 로고    scopus 로고
    • Active microfiltered sensor interfaces, photocatalytic reactors, and microbatteries using combined micro/nanoporous interfaces
    • Gole, J.L.; Corno, J.; Ozdemir, S.; Prokes, S.; Shin, H.-C. Active microfiltered sensor interfaces, photocatalytic reactors, and microbatteries using combined micro/nanoporous interfaces. Phys. Stat. Sol. (c) 2009, 6, 1773-1776.
    • (2009) Phys. Stat. Sol. (c) , vol.6 , pp. 1773-1776
    • Gole, J.L.1    Corno, J.2    Ozdemir, S.3    Prokes, S.4    Shin, H.-C.5
  • 200
    • 38949164705 scopus 로고    scopus 로고
    • Membranes in Desalination and Water Treatment
    • Vainrot, N.; Eisen, M.S.; Semiat, R. Membranes in Desalination and Water Treatment. MRS Bull. 2008, 33, 16-20.
    • (2008) MRS Bull , vol.33 , pp. 16-20
    • Vainrot, N.1    Eisen, M.S.2    Semiat, R.3
  • 204
    • 0034430566 scopus 로고    scopus 로고
    • Derivatization, stabilization and oxidation - three methods for stabilization and functionalization of porous silicon surfaces via hydrosilylation and electrografting reactions
    • Stewart, M.P.; Robins, E.G.; Geders, T.W.; Allen, M.J.; Cheul Choi, H.; Buriak, J.M. Derivatization, stabilization and oxidation - three methods for stabilization and functionalization of porous silicon surfaces via hydrosilylation and electrografting reactions. Phys. Stat. Sol. (a) 2000, 182, 109-115.
    • (2000) Phys. Stat. Sol. (a) , vol.182 , pp. 109-115
    • Stewart, M.P.1    Robins, E.G.2    Geders, T.W.3    Allen, M.J.4    Cheul Choi, H.5    Buriak, J.M.6
  • 206
    • 67649987646 scopus 로고    scopus 로고
    • Electrochemically induced bioactivity of porous silicon functionalized by acetylene
    • Pastor, E.; Salonen, J.; Lehto, V.; Matveeva, E. Electrochemically induced bioactivity of porous silicon functionalized by acetylene. Phys. Stat. Sol. (c) 2009, 206, 1333-1338.
    • (2009) Phys. Stat. Sol. (c) , vol.206 , pp. 1333-1338
    • Pastor, E.1    Salonen, J.2    Lehto, V.3    Matveeva, E.4
  • 207
    • 0036769848 scopus 로고    scopus 로고
    • Biosensors: Barcoded Molecules
    • Lehmann, V. Biosensors: Barcoded Molecules. Nat. Mater. 2002, 1, 12-13.
    • (2002) Nat. Mater. , vol.1 , pp. 12-13
    • Lehmann, V.1
  • 208
    • 84888869504 scopus 로고    scopus 로고
    • ELTRAN; SOI-Epi wafer™ by epitaxial layer transfer from porous Si
    • Properties, Significance for Advanced Materials, Phoenix, Arizona 22-27 October
    • Yonehara, T.; Sakaguchi, K. ELTRAN; SOI-Epi wafer™ by epitaxial layer transfer from porous Si. In Proceedings of 2nd International Symposium on Pits and Pores: Formation, Properties, Significance for Advanced Materials, Phoenix, Arizona, 22-27 October 2000; Volume 198.
    • (2000) Proceedings of 2nd International Symposium on Pits and Pores: Formation , pp. 198
    • Yonehara, T.1    Sakaguchi, K.2
  • 211
    • 0001683978 scopus 로고
    • First-principles calculation of dielectric properties of GaAs: Dielectric Constant, Effective Charges, and Piezoelectric Constant
    • McKitterick, J.B. First-principles calculation of dielectric properties of GaAs: Dielectric Constant, Effective Charges, and Piezoelectric Constant. Phys. Rev. B 1983, 28, 7384-7386.
    • (1983) Phys. Rev. B , vol.28 , pp. 7384-7386
    • McKitterick, J.B.1
  • 212
    • 0642275027 scopus 로고    scopus 로고
    • Spontaneous polarization and piezoelectric constants of III-V nitrides
    • Bernardini, F.; Fiorentini, V.; Vanderbilt, D. Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B 1997, 56, R10024-R10027.
    • (1997) Phys. Rev. B , vol.56
    • Bernardini, F.1    Fiorentini, V.2    Vanderbilt, D.3
  • 213
    • 33846006566 scopus 로고    scopus 로고
    • Multiferroics: Progress and Prospects in Thin Films
    • Ramesh, R.; Spaldin, N.A. Multiferroics: Progress and Prospects in Thin Films. Nat. Mat. 2007, 6, 21-29.
    • (2007) Nat. Mat. , vol.6 , pp. 21-29
    • Ramesh, R.1    Spaldin, N.A.2
  • 214
    • 0034930381 scopus 로고    scopus 로고
    • Sequence-specific detection of individual DNA strands using engineered nanopores
    • Howorka, S.; Cheley, S.; Bayley, H. Sequence-specific detection of individual DNA strands using engineered nanopores. Nat. Biotechnol. 2001, 19, 636-639.
    • (2001) Nat. Biotechnol. , vol.19 , pp. 636-639
    • Howorka, S.1    Cheley, S.2    Bayley, H.3
  • 217
    • 0036797062 scopus 로고    scopus 로고
    • Characterization of nucleic acids by nanopore analysis
    • Deamer, D.W.; Branton, D. Characterization of nucleic acids by nanopore analysis. Nature 2002, 35, 817-825.
    • (2002) Nature , vol.35 , pp. 817-825
    • Deamer, D.W.1    Branton, D.2
  • 218
    • 0036106307 scopus 로고    scopus 로고
    • Whole cell patch recording performed on a planar glass chip
    • Fertig, N.; Blick, R.H.; Behrends, J.C. Whole cell patch recording performed on a planar glass chip. Biophys. J. 2002, 82, 3056-3062.
    • (2002) Biophys. J. , vol.82 , pp. 3056-3062
    • Fertig, N.1    Blick, R.H.2    Behrends, J.C.3
  • 219
    • 23144462014 scopus 로고    scopus 로고
    • Go with the microflow
    • Clayton, J. Go with the microflow. Nat. Methods 2005, 2, 621-627.
    • (2005) Nat. Methods , vol.2 , pp. 621-627
    • Clayton, J.1
  • 221
    • 0019554556 scopus 로고
    • All-solid lithium electrodes with mixed-conductor matrix
    • Boukamp, B.A.; Lesh, G.C.; Huggins, R.A. All-solid lithium electrodes with mixed-conductor matrix. J. Electrochem. Soc. 1981, 128, 725-729.
    • (1981) J. Electrochem. Soc. , vol.128 , pp. 725-729
    • Boukamp, B.A.1    Lesh, G.C.2    Huggins, R.A.3


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