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Applied Physics A: Materials Science and Processing

Volumn 67, Issue 4, 1998, Pages 459-467

A model for current oscillations in the Si-HF system based on a quantitative analysis of current transients

(4) Carstensen, J a Prange, R a Popkirov, G S a Foll H a

a UNIVERSITY OF KIEL (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DISSOLUTION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC IMPEDANCE MEASUREMENT; ELECTROCHEMICAL ELECTRODES; ELECTROLYTES; HYDROFLUORIC ACID; MATHEMATICAL MODELS; MONTE CARLO METHODS; OXIDES; SILICON WAFERS; TRANSIENTS;

ANODIC GROWTH; CURRENT OSCILLATIONS; CURRENT TRANSIENTS; OXIDE THICKNESS;

ANODIC OXIDATION;

EID: 0032181099 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390050804 Document Type: Article

Times cited : (63)

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