Unexpected dissolution process at porous n-InP electrodes

ECS Transactions

Volumn 19, Issue 3, 2009, Pages 313-319

  Santinacci, L ^a   Bouttemy, M ^a   Gerard I ^a   Etcheberry, A ^a  

^a LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL ANALYSIS; CHLORINE COMPOUNDS; DISSOLUTION; ELECTROCHEMICAL ETCHING; ELECTRODES; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; INTERFACE STATES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SILVER COMPOUNDS;

AG/AGCL; ATOMIC ABSORPTION SPECTROSCOPY; CHEMICAL DISSOLUTION; DISSOLUTION PROCESS; DISSOLVED MATERIALS; PORE FORMATION; POROUS ETCHING; POTENTIOSTATIC CONDITIONS;

VANADIUM COMPOUNDS;

EID: 74349115711     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3120711     Document Type: Conference Paper

References (7)

1. L. Santinacci and T. Djenizian, C. R. Chimie 11, 962 (2008).
2. V. Lehmann, Electrochemistry of Silicon, Wiley-VCH, Weinheim, 2002.
3. V. Lehmann, J. Electrochem. Soc. 140, 2836 (1993).
4. H. Foll, S. Langa, J. Carstensen, M. Christopherseii, and I. M. Tiginyanu, Adv. Mater. 15, 183 (2003).
5. S. Preusser, M. Herlem, A. Etcheberry, and J. Jaume, Electrochim. Acta 37, 289 (1992).
6. P. H. L. Notten and J. J. Kelly, Etching of III-V Semiconductors: An Electrochemical Approach, Elsevier Science k, Technology, 1991.
7. J. Carstensen, E. Foca, S. Keipert, H. Foll, M. Leisner, and A. Cojocaru, Phys. Status Solidi A 205, 2485 (2008).