In situ infrared characterization of the silicon surface in hydrofluoric acid

Journal of Applied Physics

Volumn 81, Issue 11, 1997, Pages 7684-7686

  Chazalviel, J N ^a   Ozanam, F ^a  

^a LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000994368     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365348     Document Type: Article

References (21)

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21. -1) and ν OH regions. Also, the correction procedure could probably be improved by taking into account the variation of the refractive index of water upon adding HF and the frequency dependence of the refractive indexes of the various media. However, in the clear absence of an important effect, further improvements of the procedure appear of little interest.