Pores in III-V semiconductors

Advanced Materials

Volumn 15, Issue 3, 2003, Pages 183-198

  Föll, Helmut ^a   Langa, Sergiu ^a,b   Carstensen, Jürgen ^a   Christophersen, Marc ^a   Tiginyanu, Ion M ^a,b  

^a UNIVERSITY OF KIEL   (Germany)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ETCHING; LATTICE CONSTANTS; LIGHT SCATTERING; MORPHOLOGY; NUCLEATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PORE SIZE; POROUS MATERIALS; SINGLE CRYSTALS;

ELECTROCHEMICAL ETCHING; PORE DOMAIN FORMATION; SELF-ORGANIZATION; VOLTAGE OSCILLATIONS;

SEMICONDUCTOR MATERIALS;

EID: 0037419660     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200390043     Document Type: Article

References (89)

1. L. T. Canham, Appl. Phys. Lett. 1990, 57, 1046.
2. V. Lehmann, U. Gösele, Appl. Phys. Lett. 1991, 58, 856.
3. T. Yonehara, presented at Porous Semiconductors Science and Technology (PSST 2002), Tenerife, Spain, March, 2002.
4. R. B. Wehrspohn, J. Schilling, MRS Bull. 2002, 26, 623.
5. O. Jessensky, F. Müller, U. Gösele, Thin Solid Films 1997, 297, 224.
6. J. S. Shor, I. Grimberg, B.-Z. Weiss, A. D. Kurtz, Appl. Phys. Lett. 1993, 62, 2836.
7. Pits and Pores: Formation, Properties and Significance for Advanced Luminescent Materials (Eds: P. Schmuki, D. J. Lockwood, H. S. Isaacs, A. Bsiesy), The Electrochemical Society, Montreal 1997, pp. 97-9.
8. B. D. Chase, D. B. Holt, J. Electrochem. Soc. 1972, 119, 314.
9. M. M. Faktor, D. G. Fiddyment, M. R. Taylor, J. Electrochem. Soc. 1975, 122, 1566.
10. H. Föll, J. Carstensen, S. Langa, M. Christophersen, I. M. Tiginyanu, PSST 2002, Phys. Status Solidi. A 2003, in press.
11. Pits and Pores II: Formation, Properties and Significance for Advanced Materials (Eds: P. Schmuki, D.J. Lockwood, Y. Ogata, and H.S. Isaacs), The Electrochemical Society, Phoenix, AR 2001.
12. S. Langa, M. Christophersen, J. Carstensen, I. M. Tiginyanu, H. Föll, PSST 2002, Phys. Status Solidi A 2003, in press.
13. A. I. Belogorokhov, V. A. Karavanskii, A. N. Obraztsov, V. Yu. Timoshenco, JETP Lett. 1994, 60, 274.
14. Anedda, A. Serpi, V. A. Karavanskii, I. M. Tiginyanu, V. M. Ichizli, Appl. Phys. Lett. 1995, 67, 3316.
15. K. Kuriyama, K. Ushiyama, K. Ohbora, Y. Miyamoto, S. Takeda, Phys. Rev. B 1998, 58, 1103.
16. B. H. Erne, D. Vanmaekelbergh, J. J. Kelly, J. Electrochem. Soc. 1996, 143, 305.
17. F. Iranzo Marin, M. A. Hamstra, D. Vanmaekelbergh, J. Electrochem. Soc. 1996, 3, 1137.
18. F. J. P. Schuurmans, D. Vanmaekelbergh, J. van de Lagemaat, A. Lagendijk, Science 1999, 284, 141.
19. F. J. P. Schuurmans, M. Magens, D. Vanmaekelbergh, A. Lagendijk, Phys. Rev. Lett. 1999, 83, 2183.
20. J. Gomez Rivas, A. Lagendijk, R. W. Tjerkstra, D. Vanmaekelbergh, J. J. Kelly, Appl. Phys. Lett. 2002, 80, 4498.
21. M. A. Stevens-Kalceff, I. M. Tiginyanu, S. Langa, H. Föll, J. Appl. Phys. 2001, 89, 2560.
22. I. M. Tiginyanu, I. V. Kravetsky, G. Marowsky, H. L. Hartnagel, Phys. Status Solidi A 1999, 175, R5.
23. E. Kikuno, M. Amiotti, T. Takizawa, S. Arai, Jpn. J. Appl. Phys. 1995, 34, 177.
24. I. M. Tiginyanu, G. Irmer, J. Monecke, H. L. Hartnagel, Phys. Rev. B 1997, 55, 6739.
25. I. M. Tiginyanu, V. V. Ursaki, Y. S. Raptis, V. Stergiou, E. Anastassakis, H. L. Hartnagel, A. Vogt, B. Prevot, C. Schwab, Phys. Status Solidi B 1999, 211, 281.
26. A. Liu, C. Duan, Phys. E 2001, 9, 723.
27. M. Ohmukai, Y. Tsutumi, Thin Solid Films 1997, 302, 51.
28. A. Liu, C. Duan, Appl. Phys. Lett. 2001, 78, 43.
29. H. Fujikura, A. Liu, A. Hamamatsu, T. Sato, H. Hasegawa, Jpn. J. Appl. Phys. 2000, 39, 4616.
30. A. Hamamatsu, C. Kaneshiro, H. Fujikura, H. Hasegawa, J. Electroanal. Chem. 1999, 473, 223.
31. W. Bludau, Halbleiter-Optoelektronik, Die physikalischen Grundlagen der LED's, Diodenlaser und pn-Photodioden, Hanser Verlag, München-Wien 1995.
32. I. M. Tiginyanu, I. V. Kravetsky, J. Monecke, W. Cordts, G. Marowsky, H. L. Hartnagel, Appl. Phys. Lett. 2000, 77, 2415.
33. E. K. Propst, P. A. Kohl, J. Electrochem. Soc. 1994, 141, 1006.
34. M. Christophersen, J. Carstensen, A. Feuerhake, H. Föll, Mat. Sci. Eng. B 2000, 69-70, 194.
35. P. Schmuki, J. Fraser, C. M. Vitus, M. J. Graham, H. S. Isaacs, J. Electrochem. Soc. 1996, 143, 3316.
36. H. Gerischer, I. Wallem-Mattes, Z. Phys. Chem. 1969, 64, 187.
37. S. R. Morrison, J. Appl. Phys. 1982, 52, 1233.
38. X. G. Zhang, J. Electrochem. Soc. 1991, 138, 3750.
39. R. Memming, in Electroanalytical Chemistry. A Series of Advances, vol. 11. (Ed: A. J. Bard), Marcel Dekker, New York 1979, Ch. 1.
40. B. P. Minks, D. Vanmaekelbergh, J. J. Kelly, J. Electroanal. Chem. 1989, 273, 133.
41. Kaneshiro, T. Sato, H. Hagesagawa, Jpn. J. Appl. Phys. 1999, 38, 1147.
42. P. H. L. Notten, J. E. A. M. van den Meerakker, J. J. Kelly, Etching of III-V semiconductors: An electrochemical approach, Elsevier, Oxford 1991.
43. V. Lehmann, Electrochemistry of Silicon, Wiley-VCH, Weinheim 2002.
44. P. Schmuki, L. E. Erikson, D. J. Lockwood, B. F. Mason, J. W. Fraser, G. Champion, H. J. Labbe, J. Electrochem. Soc. 1999, 146, 735.
45. P. Schmuki, L. E. Erickson, D. J. Lockwood, J. W. Fraser, G. Champion, H. J. Labbe, Appl. Phys. Lett. 1998, 72, 1039.
46. P. Schmuki, L. Santinacci, T. Djenizian, D. J. Lockwood, Phys. Status Solidi A 2000, 182, 51.
47. R. W. Tjerkstra, J. Gomez-Rivas, D. Vanmaekelbergh, J. J. Kelly, Electrochem. Solid-State Lett. 2002, 5, G32.
48. P. Müller, IUPAC Manual of Symbols and Technology, Pure Appl. Chem. 1972, 31, 578, Appendix 2, Part 2.
49. I. M. Tiginyanu, I. V. Kravetsky, S. Langa, G. Marowsky, J. Monecke, H. Föll, PSST 2002 Phys. Status Solidi A 2003, in press.
50. S. Langa, I. M. Tiginyanu, J. Carstensen, M. Christophersen, H. Föll, Electrochem. Solid-State Lett. 2000, 3, 514
51. C. Levy-Clement, A. Lagoubi, M. Tomkiewitch, J. Electrochem. Soc. 1994, 141, 958.
52. T. Osaka, K. Ogasawara, and S. Nakahara, J. Electrochem. Soc. 1997, 144, 3226.
53. Y. Morishita, S. Kowai, J. Sunagawa, T. Suzuki, Electrochem. Solid-State Lett. 2001, 4, G4.
54. J. C. Tranchart, L. Hollan, R. Memming, J. Electrochem. Soc. 1978, 125, 1185.
55. V. Lehmann, R. Stengel, A. Luigart, Mater. Sci. Eng. B 2000, 69-70, 11.
56. J. Carstensen, M. Christophersen, H. Föll, Mater. Sci. Eng. B 2000, 69-70, 23.
57. V. Lehmann, J. Electrochem. Soc. 1996, 143, 1313.
58. J. Carstensen, R. Prange, G. S. Popkirov, H. Föll, Appl. Phys. A 1998, 67, 459.
59. F. M. Ross, G. Oskam, P. C. Searson, J. M. Macaulay, J. A. Liddle, Philos. Mag. A 1997, 75, 525.
60. M. Hao, H. Uchida, T. Soga, T. Jombo, M. Umeno, J. Cryst. Growth 1997, 179, 661.
61. S. Langa, J. Carstensen, M. Christophersen, H. Föll, I. M. Tiginyanu, Appl. Phys. Lett. 2001, 78, 1074.
62. P. Allongue, C. Henry de Villeneuve, L. Pinsard, M. C. Bernard, Appl. Phys. Lett. 1995, 67, 7.
63. V. Lehmann, J. Electrochem Soc. 1993, 140, 2836.
64. I. M. Tiginyanu, C. Schwab, J.-J. Grob, B. Prevot, H. L. Hartnagel, A. Vogt, G. Irmer, J. Monecke, Appl. Phys. Lett. 1997, 71, 3829.
65. M. M. Carrabba, N. M. Nguyen, R. D. Rauh, J. Electrochem. Soc. 1987, 134, 1855.
66. H. Föll, S. Langa, J. Carstensen, M. Christophersen, presented at MRS Spring Meeting, San Francisco, USA, April 2002.
67. T. Takizawa, S. Arai, M. Nakahara, Jpn. J. Appl. Phys. 1994, 54, L643.
68. S. Langa, J. Carstensen, I. M. Tiginyanu, M. Christophersen, H. Föll, Electrochem. Solid-State Lett. 2001, 4, G50.
69. E. Harvey, D. N. Buckley, S. N. G. Chub, Electrochem. Solid-State Lett. 2002, 5, G22.
70. M. Christophersen, S. Langa, J. Carstensen, I. M. Tiginyanu, H. Föll, PSST 2002 Phys. Status Solidi A 2003, in press.
71. M. Christophersen, K. Voigt, presented at the International Workshop on Porous III-V materials, Kiel, Germany, October 2001.
72. J. E. A. N. van den Meerakker, R. J. G. Elfrink, W. M. Weeda, Phys. Status Solidi A 2002, in press.
73. I. M. Tiginyanu, V. V. Ursaki, V. A. Karavanskii, V. N. Sokolov, Y. S. Raptis, E. Anastassakis, Solid State Commun. 1996, 97, 675.
74. W. P. Gomes, H. H. Goossens, in Advances in Electrochemical Science and Engineering (Eds: H. Gerischer, C.W. Tobias) VCH, Weinheim, 1994.
75. T. Takebe, T. Yamamoto, M. Fujii, K. Kobayashi, J. Electrochem. Soc. 1993, 140, 1169.
76. It should be noted that in the literature a second definition can be found. In this case, the <111> directions point from B to A planes along the longest (not shortest) distance between these planes. The authors think that the first definition is more appropriate to describe the dissolution process.
77. S. Langa, J. Carstensen, M. Christophersen, H. Föll, I. M. Tiginyanu, in Selfordering in Porous III-V Compounds, in Ordered Pore Systems (Ed: R. B. Wehrspohn) Springer, Berlin 2003.
78. C. Jäger, B. Finkenberger, W. Jäger, M. Christophersen, J. Carstensen, H. Föll, Mater. Sci. Eng. B 2000, 69-70, 199.
79. S. Langa, J. Carstensen, I. M. Tiginyanu, M. Christophersen, H. Föll, Electrochem. Solid-State Lett. 2002, 5, C14.
80. R. Arens-Fischer, M. Krüger, M. Thönissen, V. Ganse, D. Hunkel, M. Marso, L. Lüth, J. Porous Mater. 2000, 7, 223.
81. E. K. Squire, P. A. Show, P. S. J. Russel, L. T. Canham, A. J. Simons, C. L. Reeves, D. J. Wallis, J. Porous Mater. 2000, 7, 209.
82. H. Masuda, K. Yada, A. Osaka, Jpn. J. Appl. Phys. 1998, 37, L1340.
83. A.-P. Li, F. Müller, U. Gösele, Electrochem. Solid-State Lett. 2000, 3, 131.
84. J. Grzanna, H. Jungblut, H. J. Lewerenz, J. Electroanal. Chem. 2000, 486, 181.
85. H. Föll, J. Carstensen, M. Christophersen, G. Hasse, presented at Electrochemical Society Fall Meeting, Phoenix, AZ, September 2000.
86. J. Schilling, F. Müller, S. Matthias, R. B. Wehrspohn, U. Gösele, K. Busch, Appl. Phys. Lett. 2001, 78, 1180.
87. J.-N. Chazalviel, R. B. Wehrspohn, F. Ozanam, Mater. Sci. Eng. B 2000, 69-70, 1.
88. H. Föll, J. Carstensen, M. Christophersen, G. Hasse, Phys. Status Solidi A 2000, 182, 7.
89. Z. H. Lu, T. Tyliszczak, A. P. Hitschcock, Phys. Rev. B 1998, 58, 13 820.