Pore morphology and self-organization effects during etching of n-type GaP(100) in bromide solutions

Electrochemical and Solid-State Letters

Volumn 8, Issue 12, 2005, Pages

  Wloka, J ^a,b   Mueller, K ^a   Schmuki, P ^a,b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b ELECTROCHEMICAL SOCIETY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BROMIDE SOLUTIONS; PORE MORPHOLOGY; POTENTIOSTATIC CONDITIONS; SELF-ORGANIZATION EFFECTS;

ELECTROCHEMISTRY; ETCHING; MICROMETERS; MORPHOLOGY; POROUS MATERIALS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 28044466904     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2103507     Document Type: Article

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