A self-consistent theoretical model for macropore growth in n -type silicon

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Barillaro, G ^a   Pieri, F ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DASH-DOT LINE; FLAT SILICON ELECTRODES; IONIC TRANSFER RATE; PORE DEPTH;

CONCENTRATION (PROCESS); CURRENT DENSITY; DIFFERENTIAL EQUATIONS; ELECTROLYTES; ERROR DETECTION; FUNCTIONS; MICROMACHINING; PORE SIZE;

SILICON;

EID: 20544471372     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1915534     Document Type: Article

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