Porous anodic 4H-SiC: thickness dependent anisotropy in pore propagation and ellipsometric characterization

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 213-219

  Zangooie, S ^a   Arwin, H ^b  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; OPTICAL PROPERTIES; POROUS MATERIALS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

PORE PROPAGATION; POROUS SILICON CARBIDE; SPECTROSCOPIC ELLIPSOMETRY;

SILICON CARBIDE;

EID: 0034430434     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<213::AID-PSSA213>3.0.CO;2-F     Document Type: Article

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