Macropore density as a function of HF-concentration and bias

Electrochimica Acta

Volumn 53, Issue 2, 2007, Pages 823-828

  Bao, X Q ^a,b   Lin, J L ^c   Jiao, J W ^a   Wang, Y L ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

Current burst model; HF concentration; Macropore density; Penetrating and focusing power; SCR width

Indexed keywords

DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; ELECTROLYTES; ETCHING; SILICON;

CURRENT BURST MODELS; HF CONCENTRATION; MACROPORE DENSITY; PORE DENSITY; SPACE CHARGE REGION WIDTH;

POROUS MATERIALS;

EID: 35148883045     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2007.07.065     Document Type: Article

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