Fast pore etching

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 8, 2005, Pages 1369-1373

  Frey, S ^a   Kemell, M ^b   Carstensen, J ^a   Langa, S ^a   Foll H ^a  

^a UNIVERSITY OF KIEL   (Germany)

^b UNIVERSITY OF HELSINKI   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT LINES; FAST PORE ETCHING; PORE DIAMETERS; SILICON MACROPORES;

CONCENTRATION (PROCESS); CRYSTAL GROWTH; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTROLYTES; OSCILLATIONS; OXIDATION; PORE SIZE; POROUS SILICON; SURFACE ROUGHNESS;

ETCHING;

EID: 25444500194     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461104     Document Type: Conference Paper

References (6)

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2. V. Lehmann, S. Stengl, and A. Luigart, Mater. Sci. Eng. B 69-70, 11 (2000).
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4. H. Föll, S. Langa, J. Carstensen, M. Christophersen, and I. M. Tiginyanu, Adv. Mater. 15, 183 (2003).
5. J. Carstensen, M. Christophersen, G. Hasse, and H. Föll, phys. stat. sol. (a) 182(1), 63 (2000).
6. M. Christophersen, J. Carstensen, K. Voigt, and H. Föll, phys. stat. sol. (a) 197(1), 34 (2003).