Self-organization phenomena at semiconductor electrodes

Electrochimica Acta

Volumn 55, Issue 2, 2009, Pages 327-339

  Foll H ^a   Leisner, M ^a   Cojocaru, A ^a   Carstensen, J ^a  

^a UNIVERSITY OF KIEL   (Germany)

Author keywords

Electrochemistry of semiconductors; Pore formation; Self induced oscillations; Self organization; Silicon

Indexed keywords

ANODIC FORMATION; CURRENT BURSTS; CURRENT OSCILLATION; GAAS; INP; LENGTH SCALE; PORE DENSITIES; PORE DIAMETERS; PORE FORMATION; PORE GROWTH; POROUS METAL; SELF-INDUCED GROWTH; SELF-INDUCED OSCILLATIONS; SELF-ORGANIZATION; SELF-ORGANIZATIONS; SEMICONDUCTOR ELECTRODE; UNDERLYING PRINCIPLES;

DISSOLUTION; ELECTROCHEMISTRY; ELECTRODES; GALLIUM ALLOYS; GERMANIUM; METAL RECOVERY; PORE SIZE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350445778     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2009.03.076     Document Type: Article

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