Pore growth on n-type InP investigated by in-situ FFT impedance spectroscopy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 7, 2009, Pages 1566-1570

  Leisner, Malte ^a   Carstensen, Jürgen ^a   Cojocaru, Ala ^a   Föll, Helmut ^a  

^a UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL EQUIVALENT; ELECTROLYTE CONCENTRATION; ETCHING TIME; EXTERNAL POTENTIAL; FITTING MODEL; FITTING PARAMETERS; IMPEDANCE SPECTROSCOPY; IN-SITU; INP; MASS TRANSFER PHENOMENA; MASS TRANSFER PROCESS; PARAMETER DEPENDENCE; PHYSICOCHEMICAL REACTIONS; PORE DEPTH; PORE FORMATION; PORE GROWTH; POTENTIAL DROP; TOTAL CURRENT;

ETCHING; FAST FOURIER TRANSFORMS; GRAFTING (CHEMICAL); MASS TRANSFER; SYNTHESIS (CHEMICAL);

SEMICONDUCTOR GROWTH;

EID: 70949084923     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881014     Document Type: Conference Paper

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