Dependence of macropore formation in n-Si on potential, temperature, and doping

Journal of the Electrochemical Society

Volumn 147, Issue 2, 2000, Pages 627-635

  Hejjo Al Rifai, M ^a   Christophers, M ^a   Ottow, S ^a   Carstensen, J ^a   Foll H ^a  

^a UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTROLYTES; IMAGE PROCESSING; MATHEMATICAL MODELS; NUCLEATION; TEMPERATURE; THICKNESS MEASUREMENT;

COMPUTERIZED IMAGE PROCESSING; NUCLEATED MACROPORES; PORE FORMATION MODELS;

SILICON WAFERS;

EID: 0034140953     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393244     Document Type: Article

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