Parameter dependence of pore formation in silicon within a model of local current bursts

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 63-69

  Carstensen, J ^a   Christophersen, M ^a   Hasse, G ^a   Foll H ^a  

^a UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; DISSOLUTION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NUCLEATION; PASSIVATION; PORE SIZE; RATE CONSTANTS; SOLID ELECTROLYTES;

CHEMICAL TRANSFER RATE; LOCAL CURRENT BURST; PORE FORMATION; PORE GROWTH; POTENTIAL DISTRIBUTION;

SEMICONDUCTING SILICON;

EID: 0034430053     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<63::AID-PSSA63>3.0.CO;2-E     Document Type: Article

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