Morphology and effects of hydrogen etching of porous SiC

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 4070-4074

  Sagar, Ashutosh ^a   Lee, C D ^a   Feenstra, R M ^a   Inoki, C K ^b   Kuan, T S ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BRANCHED STRUCTURES; ETCH RATES; ETCHING PROCESS; GASPHASE; HYDROGEN ETCHING; PORE FORMATION; POROUS NETWORKS; POROUS SIC; RATE-LIMITING STEPS;

ETCHING; HYDROGEN; MORPHOLOGY; POROUS MATERIALS;

SILICON CARBIDE;

EID: 18644367504     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1501749     Document Type: Article

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