Theoretical modelling of the I-V characteristics of p-type silicon in fluoride electrolyte in the first electropolishing plateau

Electrochimica Acta

Volumn 54, Issue 11, 2009, Pages 3053-3058

  Cheggou, R ^a,b   Kadoun, A ^a   Gabouze, N ^b   Ozanam, F ^c   Chazalviel, J N ^c  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b L'Unite de Developpement de la Technologie du Silicium   (Algeria)

^c LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

Anodic dissolution; Electrochemical kinetics; Interfacial oxide; Passivation; Silicon electrochemistry

Indexed keywords

DISSOLUTION; ELECTROLYSIS; ELECTROLYTES; ELECTROLYTIC POLISHING; LINEAR SYSTEMS; NONMETALS; PASSIVATION; SILICON COMPOUNDS; STRONTIUM COMPOUNDS; THICKNESS MEASUREMENT;

ANODIC DISSOLUTION; COMPOSITE MEDIUMS; ELECTRO-POLISHING; ELECTROCHEMICAL KINETICS; FLUORIDE CONCENTRATIONS; FLUORIDE ELECTROLYTES; H FUNCTIONS; I-V CHARACTERISTICS; INTERFACIAL OXIDE; MATHEMATICAL FORMALISMS; NON-LINEAR DIFFERENTIAL EQUATIONS; OXIDE LAYERS; OXIDE THICKNESS; P-TYPE SI; P-TYPE SILICONS; SILICON ELECTROCHEMISTRY; SILICON SURFACES; THEORETICAL APPROACHES; THEORETICAL MODELLING; VOLTAMMOGRAMS;

ELECTROCHEMISTRY;

EID: 62249222501     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2008.12.006     Document Type: Article

References (22)

1. Uhlir A. Bell Syst. Tech. J. 35 (1956) 333
2. Turner D.R. J. Electrochem. Soc. 105 (1958) 402
3. Canham L.T. Appl. Phys. Lett. 57 (1990) 1046
4. Chazalviel J.-N., Etman M., and Ozanam F. J. Electroanal. Chem. 297 (1991) 533
5. Hassan H.H., Sculfort J.L., Etman M., Ozanam F., and Chazalviel J.-N. J. Electroanal. Chem. 380 (1995) 55
6. Cattarin S., Frateur I., Musiani M., and Tribollet R. J. Electrochem. Soc. 147 (2000) 3277
7. van den Meerakker J.E.A.M., and Mellier M.R.L. J. Electrochem. Soc. 148 (2001) G166
8. Hassan H.H., Fotouhi B., Sculfort J.-L., Abdel-Rehim S.S., Etman M., Ozanam F., and Chazalviel J.-N. J. Electroanal. Chem. 407 (1996) 105
9. da Fonseca C., Ozanam F., and Chazalviel J.-N. Surf. Sci. 365 (1996) 1
10. Eddowes M.J. J. Electroanal. Chem. 280 (1990) 297
11. Smith R.L., and Collins S.D. J. Appl. Phys. 71 (1992) R1
12. Belaïdi A., Safi M., Ozanam F., Chazalviel J.-N., and Gorochov O. J. Electrochem. Soc. 146 (1999) 2659
13. Outemzabet R., Cherkaoui M., Gabouze N., Ozanam F., Kesri N., and Chazalviel J.-N. J. Electrochem. Soc. 153 (2006) C108
14. Foca E., Carstensen J., and Föll H. J. Electroanal. Chem. 603 (2007) 175
15. Grzanna J., Jungblut H., and Lewerenz H.J. J. Electroanal. Chem. 486 (2000) 190
16. Frey S., Keipert S., Chazalviel J.-N., Ozanam F., Carstensen J., and Föll H. Phys. Status Solidi (a) 204 (2007) 1250
17. Judge J.S. J. Electrochem. Soc. 118 (1971) 1772
18. Ozanam F., da Fonseca C., Venkateswara Rao A., and Chazalviel J.-N. Appl. Spectrosc. 51 (1997) 519
19. Chazalviel J.-N. Electrochim. Acta 37 (1992) 865
20. Peiner E., and Schlachetzki A. J. Electrochem. Soc. 139 (1992) 552
21. Zhang X.G. Electrochemistry of Silicon and Its Oxide (2001), Kluwer, New York pp. 180-183
22. Lehmann V. Electrochemistry of Silicon (2002), Wiley-VCH, Weinheim, Germany pp. 57-59