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Journal of the Electrochemical Society

Volumn 156, Issue 8, 2009, Pages

Mesoporous germanium formation by electrochemical etching

(8) Garralaga Rojas, E a Plagwitz, H a Terheiden, B a Hensen, J a Baur, C b La Roche, G c Strobl, G F X c Brendel, R a

a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH (Germany)

b EUROPEAN SPACE AGENCY (Netherlands)

c AZUR SPACE Solar Power GmbH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC ETCHING; CATHODIC BIAS; DISSOLUTION RATES; ETCH RATES; GE WAFER; GROWTH EFFICIENCY; HF-ELECTROLYTES; LAYER INTERFACES; MESOPOROUS; P-TYPE; PORE FORMATION; POROUS LAYERS; SUBSTRATE WAFER;

DISSOLUTION; GERMANIUM; SUBSTRATES;

ELECTROCHEMICAL ETCHING;

EID: 67650569163 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3147271 Document Type: Article

Times cited : (33)

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