Formation of tetrahedron-like pores during anodic etching of (100) oriented n-GaAs

Electrochemical and Solid-State Letters

Volumn 5, Issue 1, 2002, Pages

  Langa, S ^a,b   Carstensen, J ^a   Tiginyanu, I M ^b   Christophersen, M ^a   Foll H ^a  

^a UNIVERSITY OF KIEL   (Germany)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTROCHEMISTRY; ETCHING; HYDROCHLORIC ACID; MORPHOLOGY; POROSITY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES;

ANODIC ETCHING; CRYSTALLOGRAPHIC DIRECTION; ELECTROCHEMICAL ETCHING; TETRAHEDRAL VOIDS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036228516     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1423803     Document Type: Article

References (17)