Macropore formation on highly doped n-type silicon

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 45-50

  Christophersen, M ^a   Carstensen, J ^a   Foll H ^a  

^a UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; NUCLEATION; OXIDATION; PORE SIZE; POROSITY; SEMICONDUCTOR DOPING; SOLID ELECTROLYTES; SURFACES;

CURRENT BURST MODEL; FACETTING; HIGHLY DOPED N TYPE SILICON; MACROPORE FORMATION; MACROPORES;

SEMICONDUCTING SILICON;

EID: 0034427724     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<45::AID-PSSA45>3.0.CO;2-6     Document Type: Article

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