Properties of 2D and 3D dielectric structures fabricated by electrochemical dissolution of III-V compounds

Materials Research Society Symposium - Proceedings

Volumn 692, Issue , 2002, Pages 663-668

  Tiginyanu, I M ^a   Langa, S ^a   Christophersen, M ^a   Carstensen, J ^a   Sergentu, V ^b   Foca, E ^b   Rios, O ^a   Foll H ^a  

^a TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^b UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DISSOLUTION; ELECTROCHEMISTRY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; NONLINEAR OPTICS; POROSITY; REFLECTION; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ELECTROCHEMICAL ETCHING;

DIELECTRIC MATERIALS;

EID: 0036058125     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)