Surface reactions in microelectronics process technology

Annual Review of Chemical and Biomolecular Engineering

Volumn 2, Issue , 2011, Pages 299-324

  Levitin, Galit ^a   Hess, Dennis W ^a  

^a Georgia Institute of Technology   (United States)

Author keywords

atomic layer deposition (ALD); atomic layer etching (ALE); copper etch; plasma etch; selective deposition; selective etching

Indexed keywords

ATOMIC LAYER ETCHING; DRY AND WET; ELECTRONIC DEVICE; FILM DEPOSITION; IMPACT DEVICE; MICRO-ELECTRONIC DEVICES; MICROELECTRONICS PROCESS; PLASMA ETCH; PROCESS INTEGRATION; PROCESS STEPS; RESIDUE REMOVAL; SELECTIVE DEPOSITION; SELECTIVE ETCHING; SEMICONDUCTOR FILMS; SURFACE PREPARATION;

ATOMIC LAYER DEPOSITION; DIELECTRIC FILMS; DRY ETCHING; FILM GROWTH; FILM PREPARATION; METALLIZING; MICROELECTRONICS; PROCESSING; SEMICONDUCTOR GROWTH; SURFACES;

SURFACE REACTIONS;

METAL; SILICON DIOXIDE;

CHEMICAL STRUCTURE; CHEMISTRY; ELECTRONICS; HUMAN; INDUSTRY; INSTRUMENTATION; METHODOLOGY; MICROTECHNOLOGY; REVIEW; SEMICONDUCTOR; SURFACE PROPERTY;

ELECTRONICS; HUMANS; INDUSTRY; METALS; MICROTECHNOLOGY; MOLECULAR STRUCTURE; SEMICONDUCTORS; SILICON DIOXIDE; SURFACE PROPERTIES;

EID: 79959450956     PISSN: 19475438     EISSN: None     Source Type: Journal    
DOI: 10.1146/annurev-chembioeng-061010-114249     Document Type: Review

References (147)

1. Chelikowski J. 2004. Introduction: Silicon in all its forms. In Silicon: Evolution and Future of a Technology, ed. P Siffert, EF Krimmel, pp. 1-25. Berlin: Springer
2. HeywangW, Zaininger KH. 2004. Silicon: The semiconductor material. In Silicon: Evolution and Future of a Technology, ed. P Siffert, EF Krimmel, pp. 25-43. Berlin: Springer
3. Moore GE. 1965. Cramming more components onto integrated circuits. Electronics 38:114-17
4. Sherman R. 2009. The worldwide electronic manufacturing services market-2010 edition. http://www. newventureresearch.com/docshow.php?docu=38
5. Gale GW, Small RJ, Reinhardt KA. 2008. Aqueous cleaning and surface conditioning process. In Handbook of SiliconWafer Cleaning Technology, ed. KA Reinhardt,WKern, pp. 201-65. Norwich,NY: William Andrew
6. Kern W. 1970. Radiochemical study of semiconductor surface contamination. I. Adsorption of reagent components. RCA Rev. 31:207-33
7. Kern W. 1990. The evolution of silicon wafer cleaning technology. J. Electrochem. Soc. 137:1887-92 (Pubitemid 20706690)
8. Kern W, Poutinen D. 1970. Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology. RCA Rev. 31:187-206
9. Kern W. 2008. Overview and evolution of silicon wafer cleaning technology. In Handbook of SiliconWafer Cleaning Technology, ed. KA Reinhardt,WKern, pp. 3-92. Norwich, NY: William Andrew
10. Farrer HN, Rossotti FJC. 1964. Proton-fluoride association in sodium perchlorate media. J. Inorg. Nucl. Chem. 26:1959-65
11. Jones LH, Penneman RA. 1954. Infrared absorption spectra of aqueous HF-2 , DF-2 , and HF. J. Chem. Phys. 22:781-82
12. 2 in acidic fluoride solutions. J. Electrochem. Soc. 118:1772-75
13. 2 composites in HF/glycerol mixtures. J. Electrochem. Soc. 127:2433-38
14. 4F:HF dilution and etching temperature. J. Electrochem. Soc. 124:917-21
15. Blumberg AA. 1959. Differential thermal analysis and heterogeneous kinetics: The reaction of vitreous silica with hydrofluoric acid. J. Phys. Chem. 63:1129-32
16. Blumberg AA, Stravrinou SC. 1960. Tabulated functions for heterogeneous reaction rates: The attack of vitreous silica by hydrofluoric acid. J. Phys. Chem. 64:1438-42
17. Knotter DM. 2000. Etching mechanism of vitreous silicon dioxide in HF based solutions. J. Am. Chem. Soc. 122:4345-51 (Pubitemid 30317089)
18. Coes J. 1953. A new dense crystalline silica. Science 118:131-32
19. Monk DJ, Doane DS, Howe RT. 1993. A review of the chemical reaction mechanism and kinetics for hydrofluoric acid etching of silicon dioxide for surface micromachining applications. Thin Solid Films 232:1-12
20. Frank MM, Chabal YJ. 2009. Surface and interface chemistry for gate stacks on silicon. In Into the Nano Era: Moore's Law Beyond Planar Silicon CMOS, ed. HR Huff, pp. 113-68. Berlin: Springer
21. Trucks GW, Raghavachari K,Higashi G, Chabal YJ. 1990. Mechanism ofHF etching of silicon surfaces: A theoretical understanding of hydrogen passivation. Phys. Rev. Lett. 65:504-7
22. Ubara H, Imura T, Hiraki A. 1984. Formation of Si-H bonds on the surface of microcrystalline silicon covered with SiOx by HF treatment. Solid State Commun. 50:673-75 (Pubitemid 14606112)
23. Kern W, Heim R. 1970. Chemical vapor deposition of silicate glasses for use with silicon devices. J. Electrochem. Soc. 117:562-73
24. Kikuyama H, Waki M, Kawanabe I, Miyashita M, Yabune Y, et al. 1992. Etching rate and mechanism of doped oxide in buffered hydrogen fluoride solution. J. Electrochem. Soc. 139:2239-43 (Pubitemid 23578395)
25. Pande AA, LevitinG,HessDW.2010. Formulation of selective etch chemistries for silicon dioxide-based films. J. Electrochem. Soc. 157:G147-53
26. Hattori T.1990. Contamination control: Problems and prospects. Solid State Technol. 33:S1-8
27. Butterbaugh JW, Muscat AJ. 2008. Gas phase wafer cleaning technology. In Handbook of Silicon Wafer Cleaning Technology, ed. KA Reinhardt,WKern, pp. 269-353. Norwich, NY: William Andrew
28. 2O, and Cu films. J. Electrochem. Soc. 142:961-65
29. +hfac) with iron and iron oxide thin films. J. Electrochem. Soc. 143:3257-66 (Pubitemid 126597276)
30. Winters HF, Coburn JW. 1992. Surface science aspects of etching reactions. Surf. Sci. Rep. 14:161-269
31. Oehrlein GS, Kurogi Y. 1998. Sidewall surface chemistry in directional etching processes. Mater. Sci. Eng. R. 24:153-83 (Pubitemid 128430615)
32. 2 etching studies in inductively coupled fluorocarbon plasmas. J. Electrochem. Soc. 148:C211-21 (Pubitemid 33724034)
33. Hynes A, Shenton M, Badyal J. 1996. Pulsed plasma polymerization of perfluorocyclohexane. Macromolecules 29:18-21
34. Standaert T, Hedlund C, Joseph E, Oehrlein G, Dalton T. 2004. Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide. J. Vac. Sci. Technol. A 22:53-61
35. Verhaverbeke S, Kuppurao S, Beaudry C, Truman J. 2002. Single-wafer, short cycle time wet clean technology. Semicond. Int. 25:91-96
36. Louis D, Peyne C, Lajoinie E, Valessi D, Homes D, et al. 1999. Improved post etch cleaning for low-k and copper integration for 0.18 μm technology. Microelectron. Eng. 46:307-10
37. Levitin G, Timmons C, Hess DW. 2006. Photoresist and etch residue removal: Effect of surface energy and interfacial tension. J. Electrochem. Soc. 153:G712-20 (Pubitemid 43838733)
38. Lane M, Rosenberg R. 2003. Interfacial relationships in microelectronic devices. Mat. Res. Soc. Symp. Proc. 766:E9.1
39. Hess DW, Reinhardt KA. 2008. Plasma stripping, cleaning, and surface conditioning. In Handbook of Silicon Wafer Cleaning Technology, ed. KA Reinhardt, W Kern, pp. 355-427. Norwich, NY: William Andrew Publ.
40. Graves DB. 1994. Plasma processing. IEEE Trans. Plasma Sci. 22:31-42
41. Irving SM. 1971. Plasma oxidation process for removing photoresist films. Solid State Technol. 14:47-56
42. Hartney MA, Soane DS, Hess DW. 1989. Oxygen plasma etching for resist stripping and multilayer lithography. J. Vac. Sci. Technol. B 7:1-14
43. 2 plasma. J. Vac. Sci. Technol. B 21:61-67
44. Miller A, Manasevit HM. 1966. Single-crystal silicon epitaxy on foreign substrates. J. Vac. Sci. Technol. A 3:68-79
45. Crowell JE. 2003. Chemical methods of thin film deposition: Chemical vapor deposition, atomic layer deposition, and related technologies. J. Vac. Sci. Technol. A 21:S88-96
46. Booker GR, Joyce BA. 1966. Nucleation in chemically grown epitaxial silicon films using molecular beam techniques. II. Initial growth behavior on clean and carbon-contaminated silicon substrates. Phil. Mag. 14:301-15
47. Joyce BA, Bradley RR, Booker GR. 1967. A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviour. Phil. Mag. 15:1167-87
48. Farnaam MJ, Olander DR. 1984. The surface chemistry of the thermal cracking of silane on silicon (111). Surf. Sci. 145:390-406
49. Jasinski JM, Gates SM. 1991. Silicon chemical vapor deposition one step at a time: Fundamental studies of silicon hydride chemistry. Acc. Chem. Res. 24:9-15
50. Scott BA, Estes RD, Jasinski JM. 1988. The role of surface reactions in monosilane pyrolysis. J. Chem. Phys. 89:2544-49
51. Zuo R, Narusawa U, Tangborn A, Nowak W. 1995. Kinetic modeling of silane surface reactions. J. Electrochem. Soc. 142:1625-29
52. Jasinski JM, Meyerson BM, Scott BA. 1987. Mechanistic studies of chemical vapor deposition. Annu. Rev. Phys. Chem. 38:109-40
53. Comfort JH, Reif H. 1989. Chemical vapor deposition of epitaxial silicon from silane at low temperatures. J. Electrochem. Soc. 136:2386-98
54. Yu ML, DeLouise LA. 1994. Surface chemistry on semiconductors studied by molecular-beam reactive scattering. Surf. Sci. Rep. 19:285-380
55. Pierson HO, ed. 1999. Handbook of Chemical Vapor Deposition: Principles, Technology, and Applications. Norwich, NY: Noyes/William Andrew
56. Hitchman ML, Jensen KF. 1993. Chemical vapor deposition: An overview. In Handbook of Chemical Vapor Deposition: Principles and Applications, ed. ML Hitchman, KF Jensen, 1-29. San Diego, CA: Academic
57. Vossen JL, Kern W. 1991. Thin Film Processes II. New York: Academic
58. Vossen JL, Kern W. 1978. Thin Film Processes. New York: Academic
59. Sherman A. 1987. Chemical Vapor Deposition for Microelectronics: Principles, Technology, and Applications. Park Ridge, NJ: Noyes
60. Sivaram S. 1995. Chemical Vapor Deposition: Thermal and Plasma Deposition of Electronic Materials. New York: Van Nostrand Reinhold
61. Xia L-Q, Lee PW, Chang M, Latchford I, Narwankar PK, et al. 2000. Chemical vapor deposition. In Handbook of Semiconductor Manufacturing Technology, ed. Y Nishi, R Doering, pp. 309-356. New York: Marcel Dekker
62. Creighton JR, Parmeter JE. 1993. Metal CVD for microelectronic applications: An examination of surface chemistry and kinetics. Crit. Rev. Solid State Mater. Sci. 18:175-237
63. ChangTC, Mor YS, Liu PT, Sze SM, Yang YL, et al. 1999. The novel precleaning treatment for selective tungsten chemical vapor deposition. Thin Solid Films 355-56:451-55 (Pubitemid 30523243)
64. Broadbent EK, Ramiller CL. 1984. Selective low pressure chemical vapor deposition of tungsten. J. Electrochem. Soc. 131:1427-33 (Pubitemid 14603818)
65. Wong M, Saraswat KC. 1989. SATPOLY: A self-aligned tungsten on polysilicon process for CMOS VLSI applications. IEEE Trans. Electron Devices 36:1355-61 (Pubitemid 20605424)
66. Bradbury DR, Kamins TI. 1986. Effect of insulator surface on selective deposition of CVD tungsten films. J. Electrochem. Soc. 133:1214-17 (Pubitemid 16566782)
67. Kobayashi N, Hara N, Iwata S, Yamamoto N. 1986. Non-selective tungsten CVD technology for gate electrodes and interconnections. Proc. IEEE VLSI Multilevel Interconnection Conf., Santa Clara, CA, pp. 436-42. Piscataway, NJ: IEEE (Pubitemid 16627758)
68. Yarmoff JA, McFeely FR. 1988. Mechanism for chemical-vapor deposition of tungsten on silicon from tungsten hexafluoride. J. Appl. Phys. 63:5213-20
69. Creighton JR. 1989. Selectivity loss during tungsten chemical vapor deposition: The role of tungsten pentafluoride. J. Vac. Sci. Technol. A 7:621-25
70. 6. Thin Solid Films 241:374-77
71. 4. J. Appl. Phys. 73:4637-44
72. 6 with Si(100); thermal and photon induced reactions. Surf. Sci. 201:47-58
73. Raupp GB, Hindman GT. 1989. Temperature programmed reaction studies of tungsten hexafluoride decomposition on silicon(100) and tungsten/silicon(100) surfaces. Proc.Workshop Tungsten Other Refract. Metals VLSI Appl., 4th, pp. 231-37. Pittsburgh, PA: Mater. Res. Soc.
74. Yu ML, Eldridge BN, Joshi RV. 1988. Critical surface reactions in the CVD of tungsten by tungsten hexafluoride/silane mixtures. Proc. Workshop Tungsten Other Refract. Metals VLSI Appl., 3rd, pp. 75-81. Pittsburgh, PA: Mater. Res. Soc.
75. 6. J. Appl. Phys. 72:1583-89
76. Yu ML, Eldridge BN. 1989. Gas/surface reactions in the chemical vapor deposition of tungsten using tungsten hexafluoride/silane mixtures. J. Vac. Sci. Technol. A 7:625-30
77. Yu ML, Eldridge BN, Joshi RV. 1989. Critical surface reactions in the CVD of tungsten by tungsten hexafluoride/silane mixtures. Proc. Workshop Tungsten Other Refract. Metals VLSI Appl., 4th, pp. 221-30. Pittsburgh, PA: Mater. Res. Soc.
78. Suntola T. 1989. Atomic layer epitoxy. Mater. Sci. Rep. 4:261-312
79. Suntola T, Hyvarinen J. 1985. Atomic layer epitaxy. Annu. Rev. Mater. Sci. 15:177-95
80. Suntola T. 1994. Atomic Layer Epitaxy. Amsterdam: Elsevier
81. Bedair SM. 1994. Atomic layer epitaxy deposition processes. Presented at Intl. Workshop Meas. Charact. Ultrashallow Doping Profiles Semicond., 2nd, Res. Triangle Park, North Carolina
82. Kim H, Lee H-B-R, MaengW-J. 2009. Applications of atomic layer deposition to nanofabrication and emerging nanodevices. Thin Solid Films 517:2563-80
83. Intl. Roadmap Comm. and Technol. Work. Groups. 2007. International technology roadmap for semiconductors. http://www.itrs.net/links/2007itrs/ home2007.htm
84. Ritala M, LeskelaM, Niinisto L, Prohaska T, Friedbacher G, Grasserbauer M. 1994. Surface roughness reduction in atomic layer epitaxy growth of titanium dioxide thin films. Thin Solid Films 250:72-80
85. 2 thin films. Thin Solid Films 340:110-16
86. 5 nanolaminates. Appl. Phys. Lett. 68:3737-39 (Pubitemid 126683668)
87. Widjaja Y,MusgraveCB. 2002. Atomic layer deposition of hafnium oxide: A detailed reactionmechanism from first principles. J. Chem. Phys. 117:1931-34 (Pubitemid 34916770)
88. Deminsky M, Knizhnik A, Belov I, Umanskii S, Rykova E, et al. 2004. Mechanism and kinetics of thin zirconium and hafnium oxide film growth in an ALD reactor. Surf. Sci. 549:67-86
89. 2 or Si-O-N) underlayers. J. Appl. Phys. 92:7168-75
90. 2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications. Microelectron. Eng. 69:145-51
91. Frank MM, Chabal YJ. 2005. Mechanistic studies of dielectric growth on silicon. In Materials Fundamentals of Gate Dielectrics, ed. AA Demkov, A Navrotsky, pp. 367-401. Dordrecht: Springer
92. Coburn JW, Winters HF. 1979. Ion- and electron-assisted gas-surface chemistry-an important effect in plasma etching. J. Appl. Phys. 50:3189-76
93. Flamm DL, Donnelly VM, Mucha JA. 1981. The reaction of fluorine atoms with silicon. J. Appl. Phys. 52:3633-40
94. Ninomiya K, Suzuki K, Nishimatsu S, OkadaO. 1987. Role of sulfur atoms inmicrowave plasma etching of silicon. J. Appl. Phys. 62:1459-69
95. Winters HF, Plumb IC. 1991. Etching reactions for silicon with fluorine atoms: Product distributions and ion enhancement mechanisms. J. Vac. Sci. Technol. B 9:197-208
96. 2) etching of Si(111): The geometric structure of the reaction layer. Phys. Rev. B 47:15648-59
97. Morikawa Y, Kubota K, Ogawa H, Ichiki T, Tachibana A, et al. 1998. Reaction of the fluorine atom and molecule with the hydrogen-terminated Si(111) surface. J. Vac. Sci. Technol. A 16:345-56
98. Chang JP, Coburn JW. 2003. Plasma-surface interactions. J. Vac. Sci. Technol. A 21:S145-52
99. Heinecke RAH. 1975. Control of relative etch rates of silicon dioxide and silicon in plasma etching. Solid-State Electron. 18:1146-47
100. 4. J. Vac. Sci. Technol. A 19:2089-96 (Pubitemid 32934610)
101. 2 etching. J. Vac. Sci. Technol. B 18:1897-902
102. 6 plasma. Microelectron. Eng. 6:553-58 (Pubitemid 18612452)
103. Gormley C, Yallup K, Nevin WA, Bhardwaj J, Ashraf H, et al. 2001. State of the art deep silicon anisotropic etching on SOI bonded substrates for dielectric isolation and MEMS applications. Proc. Electrochem. Soc. 99-35 Semicond.Wafer Bonding: Sci., Technol. Appl. V, Honolulu, pp. 350-61. Pennington, NJ: Electrochem. Soc.
104. Laermer F, Schilp A. 1996. U.S. Patent No. 5,498,312
105. 6 flow rate on the etched surface profile and bottom grass formation in deep reactive ion etching process. J. Phys. Conf. Ser. 34:577-82 (Pubitemid 43812486)
106. 2 plasmas. J. Vac. Sci. Technol. A 22:661-70
107. 3 plasma etching. J. Vac. Sci. Technol. B 23:1405-11
108. 2. J. Vac. Sci. Technol. A 26:1182-88
109. Bhardwaj J, Ashraf H, McQuarrie A. 1997. Dry silicon etching for MEMS. Proc. Electrochem. Soc. 97-1 State-of-the-Art Program Compd. Semicond., Montreal, p. 1448. Pennington, NJ: Electrochem. Soc.
110. Yang Y-J, KuoW-C, Fan K-C. 2006. Single-run single-mask inductively-coupled-plasma reactive-ionetching process for fabricating suspended high-aspect-ratiomicrostructures. Jpn. J. Appl. Phys. 45:305-10 (Pubitemid 43166681)
111. Adam TN, Kim S, Lv PC, Xuan G, Ray SK, et al. 2007. Cyclic deep reactive ion etching with mask replenishment. J. Micromech. Microeng. 17:1773-80
112. Abdolvand R, Ayazi F. 2008. An advanced reactive ion etching process for very high aspect-ratio submicron wide trenches in silicon. Sens. Actuators A 144:109-16 (Pubitemid 351608062)
113. Edelstein D, Heidenreich J, Goldblatt R, Cote W, Uzoh C, et al. 1997. Full copper wiring in a sub- 0.25 μm CMOS ULSI technology. Tech. Digest IEDM: 773-76
114. Mallikarjunan A, Sharma S, Murarka SP. 2000. Resistivity of copper films at thicknesses near the mean free path of electrons in copper minimization of the diffuse scattering in copper. Electrochem. Solid-State Lett. 3:437-38
115. LiuHD, Zhao YP,RamanathG,Murarka SP,WangGC. 2001. Thickness dependent electrical resistivity of ultrathin (<40 nm) Cu films. Thin Solid Films 384:151-56 (Pubitemid 32196586)
116. Steinhoegl W, Schindler G, Engelhardt M. 2005. Unraveling the mysteries behind size effects in metallization systems. Semicond. Int. 28:34-38 (Pubitemid 43026000)
117. Steinhoegl W, Schindler G, Steinlesberger G, Traving M, Engelhardt M. 2005. Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller. J. Appl. Phys. 97:023706
118. Wu W, Ernur D, Brongersma SH, Van Hove M, Maex K. 2004. Grain growth in copper interconnect lines. Microelectron. Eng. 76:190-94
119. Zhang W, Brongersma SH, Heylen N, Beyer G, Vandervorst W, Maex K. 2005. Geometry effect on impurity incorporation and grain growth in narrow copper lines. J. Electrochem. Soc. 152:C832-37 (Pubitemid 43058740)
120. TravingM, Schindler G, Engelhardt M. 2006. Damascene and subtractive processing of narrow tungsten lines: Resistivity and size effect. J. Appl. Phys. 100:094325
121. Lee SK, Chun SS, Hwang CY, Lee WJ. 1997. Reactive ion etchingmechanism of copper film in chlorinebased electron cyclotron resonance plasma. Jpn. J. Appl. Phys. 36:50-55
122. 4: Plasma diagnostics and patterning. J. Vac. Sci. Technol. A 12:1259-65
123. Nakakura CY, Altman EI. 1997. Bromine adsorption, reaction, and etching of Cu(100). Surf. Sci. 370:32-46 (Pubitemid 127398426)
124. 2/Ar plasma chemistry. J. Electrochem. Soc. 145:2585-89 (Pubitemid 128602510)
125. 2-based discharge. Appl. Surf. Sci. 91:147-51
126. Tang H, Herman IP. 1992. Anomalous local laser etching of copper by chlorine. Appl. Phys. Lett. 60:2164-66
127. 2 plasma with ultraviolet light irradiation. J. Electrochem. Soc. 146:3119-23
128. Choi KS, Han CH. 1998. Low-temperature plasma etching of copper films using ultraviolet irradiation. Jpn. J. Appl. Phys. 37:5945-48
129. Hahn YB, Pearton SJ, Cho H, Lee KP. 2001. Dry etching mechanism of copper and magnetic materials with UV illumination. Mater. Sci. Eng. B 79:20-26 (Pubitemid 32195982)
130. 2 plasma without/with UV irradiation. Jpn. J. Appl. Phys. 37:4103-8 (Pubitemid 128562458)
131. Choi KS, Han CH. 1998. Low-temperature copper etching using an inductively coupled plasma with ultraviolet light irradiation. J. Electrochem. Soc. 145:L37-39
132. Ohshita Y, Hosoi N. 1995. Lower temperature plasma etching of Cu using IR light irradiation. Thin Solid Films 262:67-72
133. Hosoi N, Ohshita Y. 1993. Lower-temperature plasma etching of copper films using infrared radiation. Appl. Phys. Lett. 63:2703-4
134. Kulkarni NS, DeHoff RT. 2002. Application of volatility diagrams for low temperature, dry etching, and planarization of copper. J. Electrochem. Soc. 149:G620-32 (Pubitemid 35465643)
135. Sesselmann W, Chuang TJ. 1986. The interaction of chlorine with copper. I. Adsorption and surface reaction. Surf. Sci. 176:32-66
136. l5. J. Chem. Phys. 55:4566-72
137. Wu F, Levitin G, Hess DW. 2010. Low-temperature etching of Cu by hydrogen-based plasmas. ACS Appl. Mater. Interfaces 2:2175-79
138. Thompson SE, Chau RS, Ghani T, Tyagi S, Bohr MT. 2005. IEEE Trans. Semicond. Manuf. 18:26-36
139. Colinge JP. 2007. Multi-gate SOI MOSFETs. Microelectron. Eng. 84:2071-76 (Pubitemid 46783933)
140. Skotnicki T. 2007. Materials and device structures for sub-32 nm CMOS nodes. Microelectron. Eng. 84:1845-52 (Pubitemid 46777001)
141. Athavale SD, Economou DJ. 1996. Realization of atomic layer etching of silicon. J. Vac. Sci. Technol. B 14:3702-6
142. 2 film for gate oxide in MOSFET devices. J. Phys. D 42:055202
143. Sakaue H, Iseda S, Asami K, Yamamoto J, Hirose M, Horiike Y. 1990. Atomic layer controlled digital etching of silicon. Jpn. J. Appl. Phys. 29:2648-52
144. + ion irradiation. Appl. Phys. Lett. 63:2803-5
145. Athavale SD, Economoua DJ. 1995. Molecular dynamics simulation of atomic layer etching of silicon. J. Vac. Sci. Technol. A 13:966-72
146. 2. J. Appl. Phys. 101:033308
147. Agarwal A, Kushner MJ. 2009. Plasma atomic layer etching using conventional plasma equipment. J. Vac. Sci. Technol. A 27:38-51