Unraveling the mysteries behind size effects in metallization systems

Semiconductor International

Volumn 28, Issue 5, 2005, Pages 34-38

  Steinhoegl, Werner ^a   Schindler, Guenther ^a   Engelhardt, Manfred ^a,b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29744456223     PISSN: 01633767     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (8)

1. The International Technology Roadmap for Semiconductors (ITRS), 2004 Update. Available at www.itrs.net/common/2004update/2004update.htm.
2. E.H. Sondheimer, "The Mean Free Path of Electrons in Metals," Adv. Phys., 1952.
3. A.F. Mayadas and M. Shatzkes, "Electrical-Resistivity Model for Polycrystalline Films: The Case of Arbitrary Reflection at External Surfaces," Phys. Rev. B, 1970, Vol. 1, p. 1382.
4. W. Steinhoegl, G. Schindler, G. Steinlesberger, M. Traving and M. Engelhardt, "Comprehensive Study of Copper Wires With Lateral Dimensions of 100 nm and Smaller," J. Appl. Phys., 2005, Vol. 97, p. 023706.
5. W. Steinhoegl, G. Schindler, G. Steinlesberger, M. Traving and M. Engelhardt, "Scaling Laws for the Resistivity Increase of sub-100 nm Interconnects," Proc. of the 2003 Int. Conf. on Simulation of Semiconductor Processes and Devices, 2003, p. 27.
6. G. Steinlesberger, et al., "Microstructure Study of Cu Damascene Nano-Interconnects," Proc. of the Advanced Metallization Conf. (AMC). 2002, p. 397.
7. G. Schindler, et al., "A Morphology Study of Copper and Aluminum Interconnects," Proc. of the Advanced Metallization Conf. (AMC), 2003, p. 213.
8. G. Steinlesberger, M. Engelhardr, G. Schindler and W. Steinhoegl, "Processing Technology for the Investigation of sub-50 nm Copper Damascene Interconnects," Solid State Electronten, 2002, Vol. 47, p. 1237.