Deep etching of silicon with smooth sidewalls by an improved gas-chopping process using a Faraday cage and a high bias voltage

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1405-1411

  Min, Jae Ho ^a   Lee, Jin Kwan ^a   Moon, Sang Heup ^a   Kim, Chang Koo ^b  

^a Seoul National University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRIC POTENTIAL; ETCHING; ION BOMBARDMENT; THIN FILMS;

FARADAY CAGE; GAS-CHOPPING; ION FLUXES;

SILICON;

EID: 31144452654     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1993623     Document Type: Article

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