Angular dependence of etch rates in the etching of poly-Si and fluorocarbon polymer using SF6, C4F8, and O2 plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 661-669

  Min, Jae Ho ^a   Lee, Gyeo Re ^a   Lee, Jin Kwan ^a   Moon, Sang Heup ^a   Kim, Chang Koo ^b  

^a Seoul National University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; FLUOROCARBONS; ION BOMBARDMENT; MICROELECTROMECHANICAL DEVICES; MICROSTRUCTURE; PERMITTIVITY; PLASMAS; REACTIVE ION ETCHING; SPUTTER DEPOSITION; SUBSTRATES; THICKNESS MEASUREMENT;

BOSCH PROCESSES; FLUOROCARBON POLYMERS; ION-ENHANCED POLYMER DEPOSITION; ION-INCIDENT ANGLES;

PLASMA ETCHING;

EID: 3142557995     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1722680     Document Type: Article

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