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Journal of Physics D: Applied Physics

Volumn 42, Issue 5, 2009, Pages

Atomic layer etching of ultra-thin HfO2 film for gate oxide in MOSFET devices

(6) Park, Jae Beom a Lim, Woong Sun a Park, Byoung Jae b Park, Ih Ho c Kim, Young Woon c Yeom, Geun Young a,b,d

a Sungkyunkwan University (South Korea)

b Sungkyunkwan University (South Korea)

c Seoul National University (South Korea)

d National Program for Tera Level Devices (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER ETCHINGS; CRITICAL PRESSURES; ELECTRICAL DAMAGES; ETCH DEPTHS; ETCHING CONDITIONS; GATE OXIDES; N-MOSFET; REACTIVE IONS; SURFACE COMPOSITIONS;

DRAIN CURRENT; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOSFET DEVICES; OXIDE FILMS; SURFACE ROUGHNESS;

REACTIVE ION ETCHING;

EID: 63749095920 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/42/5/055202 Document Type: Article

Times cited : (64)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.