Reaction mechanism of low-temperature Cu dry etching using an inductively coupled Cl2/N2 plasma with ultraviolet light irradiation

Journal of the Electrochemical Society

Volumn 146, Issue 8, 1999, Pages 3119-3123

  Kwon, Myoung Seok ^a   Lee, Jeong Yong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; CHLORINE; COPPER; COPPER COMPOUNDS; LIGHT ABSORPTION; MASS SPECTROMETRY; NITROGEN; PHOTONS; PLASMAS; TEMPERATURE; THIN FILMS; ULTRAVIOLET RADIATION;

GASEOUS DESORPTION; INDUCTIVELY COUPLED PLASMA; REACTION MECHANISM; ULTRAVIOLET LIGHT IRRADIATION;

DRY ETCHING;

EID: 0032592384     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392441     Document Type: Article

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