Grain growth in copper interconnect lines

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 190-194

  Wu, W ^a,b   Ernur, D ^a,b   Brongersma, S H ^a   Van Hove, M ^a   Maex, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Electro plating; Focused ion beam; Grain growth; Interconnect

Indexed keywords

ASPECT RATIO; COPPER; ELECTROPLATING; GEOMETRY; GRAIN GROWTH; ION BEAMS; MICROSTRUCTURE;

FOCUSED ION BEAMS; LINE-WIDTH; PATTERN DENSITY; PINNING SITES;

OPTICAL INTERCONNECTS;

EID: 4544298330     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.053     Document Type: Conference Paper

References (6)

1. J.M.E. Harper, C. Cabral Jr., P.C. Andricacos, L. Gignac, I.C. Noyan, K.P. Rodbell, C.K. Hu, J. Appl. Phys. 86 (1999) 2516.
2. S.H. Brongersma, E. Kerr, I. Vervoort, A. Saerens, K. Maex, J. Mater. Res. 17 (2002) 582.
3. W. Wu, S.H. Brongersma, I. Vervoort, H. Bender, M. Van Hove, K. Maex, in: Proceedings of Advanced Metallization Conference, Montreal, October 2003, pp. 225-229.
4. H. Li, S. Jin, J. Proost, M. Van Hove, L. Froyen, K. Maex, in: Proceedings of Advanced Metallization and Interconnect Systems for ULSI Application, MRS, San Diego, September 1997, pp.197-203.
5. F. Mayadas, M. Shatzkes, Phys. Rev. B 1 (1970) 1382.
6. W. Wu, S.H. Brongersma, M. Van Hove, K. Maex, Appl. Phys. Lett. 84 (2004) 2838.