Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications

Microelectronic Engineering

Volumn 69, Issue 2-4, 2003, Pages 145-151

  Gusev, E P ^a   Cabral Jr , C ^a   Copel, M ^a   D'Emic, C ^a   Gribelyuk, M ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Atomic layer deposition; Gate dielectrics; Hafnium oxide; High K

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; DEPOSITION; DIELECTRIC MATERIALS; FILM GROWTH; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MORPHOLOGY; SILICA; SILICON; SURFACES; THERMODYNAMIC STABILITY; ULTRATHIN FILMS;

GATE DIELECTRICS;

MICROELECTRONICS;

EID: 0141858720     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00291-0     Document Type: Conference Paper

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