An advanced reactive ion etching process for very high aspect-ratio sub-micron wide trenches in silicon

Sensors and Actuators, A: Physical

Volumn 144, Issue 1, 2008, Pages 109-116

  Abdolvand, Reza ^a   Ayazi, Farrokh ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Anisotropic etching; Bosch process; DRIE; Passivation layer

Indexed keywords

ANISOTROPY; ASPECT RATIO; PASSIVATION; PLASMA ETCHING; REACTIVE ION ETCHING; TRENCHING;

ANISOTROPIC POLYMER ETCHING; OXYGEN PLASMA DEPASSIVATION;

SILICON;

EID: 42949140273     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2007.12.026     Document Type: Article

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