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Volumn 17, Issue 9, 2007, Pages 1773-1780

Cyclic deep reactive ion etching with mask replenishment

Author keywords

[No Author keywords available]

Indexed keywords

BOSCH PROCESSES; CLOSELY PACKED STRUCTURES; MASKING LAYERS; MULTI-STEP;

EID: 51649101854     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/17/9/004     Document Type: Conference Paper
Times cited : (4)

References (15)
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    • Vu Q B, Stricker D A and Zavracky P M 1996 Surface characteristics of (100) silicon anisotropically etched in aqueous KOH J. Electrochem. Soc. 143 1372
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    • Vu, Q.B.1    Stricker, D.A.2    Zavracky, P.M.3
  • 5
    • 0035535245 scopus 로고    scopus 로고
    • 5 etch mask prepared by room-temperature magnetron sputtering
    • 5 etch mask prepared by room-temperature magnetron sputtering J. Vac. Sci. Technol. B 19 1169
    • (2001) J. Vac. Sci. Technol. , vol.19 , Issue.4 , pp. 1169
    • Chu, A.K.1    Lee, K.M.2    Lan, I.J.3
  • 6
    • 0034156508 scopus 로고    scopus 로고
    • Dual-doped TMAH silicon etchant for microelectromechanical structures and systems applications
    • Paranjape M, Pandy A, Brida S, Landsberger L, Kahrizi M and Zen M 2000 Dual-doped TMAH silicon etchant for microelectromechanical structures and systems applications J. Vac. Sci. Technol. A 18 738
    • (2000) J. Vac. Sci. Technol. , vol.18 , Issue.2 , pp. 738
    • Paranjape, M.1    Pandy, A.2    Brida, S.3    Landsberger, L.4    Kahrizi, M.5    Zen, M.6
  • 7
    • 0020829424 scopus 로고
    • High resolution patterning of silicon be selective gallium doping
    • Berry I L and Caviglia A L 1983 High resolution patterning of silicon be selective gallium doping J. Vac. Sci. Technol. B 1 1059
    • (1983) J. Vac. Sci. Technol. , vol.1 , Issue.4 , pp. 1059
    • Berry, I.L.1    Caviglia, A.L.2
  • 8
    • 0035519156 scopus 로고    scopus 로고
    • Balancing the etching and passivation in time-multiplexed deep dry etching of silicon
    • Blauw M A, Zijlstra T and van der Drift E 2001 Balancing the etching and passivation in time-multiplexed deep dry etching of silicon J. Vac. Sci. Technol. B 19 2930
    • (2001) J. Vac. Sci. Technol. , vol.19 , Issue.6 , pp. 2930
    • Blauw, M.A.1    Zijlstra, T.2    Van Der Drift, E.3
  • 9
    • 0042257243 scopus 로고    scopus 로고
    • Characterization of the etch rate non-uniformity in a magnetically enhanced reactive ion etcher
    • Buie M J, Pender J T P and Dahimene M 1998 Characterization of the etch rate non-uniformity in a magnetically enhanced reactive ion etcher J. Vac. Sci. Technol. A 16 1464
    • (1998) J. Vac. Sci. Technol. , vol.16 , Issue.3 , pp. 1464
    • Buie, M.J.1    Pender, J.T.P.2    Dahimene, M.3
  • 11
    • 10844258867 scopus 로고
    • Use of optical emission spectroscopy to study hexafluoroethane reactive ion beam etching of silicon in the presence of oxygen
    • Cox T I and Deshmukh V G I 1985 Use of optical emission spectroscopy to study hexafluoroethane reactive ion beam etching of silicon in the presence of oxygen Appl. Phys. Lett. 47 378
    • (1985) Appl. Phys. Lett. , vol.47 , Issue.4 , pp. 378
    • Cox, T.I.1    Deshmukh, V.G.I.2
  • 12
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    • Robert Bosch GmbH 1994 US Patents 5,498,312, 5,501,893, 4241045C1
    • (1994)
    • Bosch Gmbh, R.1
  • 14
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    • The design and fabrication of microdisk resonators for terahertz frequency operation
    • Adam T N et al 2002 The design and fabrication of microdisk resonators for terahertz frequency operation IEEE Lester Eastman Conf. on High Performance Devices 2002 (University of Delaware, Newark, DE)
    • (2002) IEEE Lester Eastman Conf. on High Performance Devices 2002
    • Adam, T.N.1    Al, E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.