Plasma Stripping, Cleaning, and Surface Conditioning

Handbook of Silicon Wafer Cleaning Technology: Second Edition

Volumn , Issue , 2008, Pages 355-427

  Hess, Dennis W ^a   Reinhard, Karen A ^b  

^a Georgia Institute of Technology   (United States)

^b Cameo Consulting   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC MATERIALS;

SURFACE CONDITIONING;

SILICON COMPOUNDS;

EID: 84882788428     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-081551554-8.50009-4     Document Type: Chapter

References (155)

1. Semiconductor Industry Association The International Technology Roadmapfor Semiconductors, San Jose 2006, Edition.
2. Langan J., Maroulis P., Ridgeway R. Solid State Technology July, 1996, 35:115.
3. Kim K.J., Oh C.H., Lee N.-E., Kim J.H., Bae J.W., Yeom G.Y., Yoon S.S. J. Vac. Sci. Technol. 2004, B22(2):483.
4. Martinetti M., Schirrecker I., Keller O., Andreani B., Giancaterina S., Larchier L., Lecohier B., Musco G. Semiconductor International June, 2002, 25(6).
5. Luongo J.P. J. Polym. Sci. 1960, 42:139.
6. Hansen R.H., Pascale J.V., de Benedictis T., Rentzepis P. J. Polym. Sci. 1965, A3:2205.
7. Wu B.J., Hess D.W., Soong D.S., Bell A.T. J. Appl. Phys. 1983, 54:1725.
8. Hartney M.A., Soane D.S., Hess D.W. J. Vac. Sci. Technol. 1989, 137:1.
9. Taylor G.N., Wolf T.M. Polymer Eng. Sci. 1980, 20:1087.
10. Pederson L. J. Electrochem. Soc. 1982, 129:205.
11. Battey J.E. IEEE Trans. Electr Dev. 1977, 24:140.
12. Boitnott C. Solid State Technology October, 1994, 51.
13. Flamm D.L. Plasma Chem. Plasma Proc. 1981, 1:37.
14. Kushner M. J. Appl. Phys. 1982, 53:2939.
15. Cook J.M., Benson B.W. J. Electrochem. Soc. 1983, 130:2459.
16. Hannon J.J., Cook J.M. J. Electrochem. Soc. 1984, 131:1164.
17. Walkup R.E., Saenger K.L., Selwyn G.S. J. Chem. Phys. 1986, 84:2668.
18. Turban G., Rapeaux M. J. Electrochem. Soc. 1983, 130:2231.
19. Eggito F.D., Emmi F., Horwath R.S., Vukanovic V. J. Vac. Sci. Technol. 1985, B3:893.
20. Matienzo L.J., Emmi F., Egitto F.D., van Hart D.C., Vukanovic V., Takacs G.A. J. Vac. Sci. Technol. 1988, A6:950.
21. Len J., Jensen K.F. J. Vac. Sci. Technol. 1991, A9:2948.
22. Baklanov M.R., Vanhaelemeersch S., Bender H., Maex K. J. Vac. Sci. Technol. 1999, 1317:372.
23. Fujimura S., Shinagawa K., Nakamura M., Yano H. Jpn. J. Appl. Phys. 1990, 29:2165.
24. Fujimura S., Shinagawa K., Suzuki M.T., Nakamura M. J. Vac. Sci. Technol. 1991, 139(2):357.
25. Fujimura S., Suzuki M.T., Shinagawa K., Nakamura M. J. Vac. Sci. Technol. 1994, 1312:2409.
26. Savas S. Solid State Technology October, 1996, 39(10):123.
27. Rubin L., Poate J. The Industrial Physicist June/July, 2003, 12.
28. Hirose K., Shimada H., Shimomura S., Ododera M., Ohmi T. J. Electrochem. Soc. 1994, 141(1):192.
29. Lee, J., Lee, C., Alvis, J., Sun, S.W., "Characterization of Ion-Implanted Photoresist Films by Fourier Transform Infrared Spectroscopy" Motorola Advanced Products and Developments Laboratory, Austin.
30. Orvek K.J., Huffman C. Nucl. Instr and Methods in Phys. Res. 1985, 137(8):501.
31. Kirkpatrick A., Fernandes N., Uk T., Patrizi G. MICRO July/August, 1998, 16(7):71.
32. Fujimura S., Konno J. Sixth Symposium on Plasma Processing 1987, 87-6:352. The Electrochemical Society, Pennington NJ. G.S. Mathad, G.C. Schwartz, R.A. Gottscho (Eds.).
33. Savas S., Zajac J., Guerra R., Helle W. US Patent 6,805,139 October 19, 2004.
34. Jehoul C., Van Baekel K., Boullart W., Struyf H., Vanhaelemeersch S. US Patent 6,352,936 March 5, 2002.
35. Bausum T., DeSarno M., Dahrooge G. Semiconductor International June, 2003, 26(6).
36. Martinetti M., Caputo G., Oggioni L., Zini E., Wurthwein A. MICRO September, 2001, 19:57. 8.
37. Robello S.G., Graff W., Krishna V., Merriam J., Keswick P. Solid State Technology December, 2003, 46(12):38.
38. Lee C.W. Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing 1995, 95-20:243. The Electrochemical Society, Pennington, NJ. J. Ruzyllo, R.E. Novak (Eds.).
39. Bell E.H. J. Vac. Sci. Technol. 1997, B15(1):88.
40. Donnelly V.M., Lemens E.P., Sorsch T.W., Timp G.L., Bauman E.H. Appl. Phys. Lett. 1999, 74:1260.
41. Lin S.-P., On C.-H., Tien Y.-C., Hsu C.-F. J. Vac. Sci. Technol. 2000, A18:1173.
42. Tao H.-J., Tsai C.-S., Huang Y-C. US Patent 6,242,350 June 05, 2001.
43. Kabansky A., Lee H. Solid State Phenomenon 2005, 103-104:59.
44. Mikulan P., Fonash S., Reinhardt K., Ta T. Third International Sym posium on Cleaning Technology in Semiconductor Device Manufacturing 1994, 94-7:319. The Electrochemical Society, Pennington, NJ. J. Ruzyllo, R.E. Novak (Eds.).
45. Armacost M., Marks J., Yang C.-L. Proceeding of the Symposium on Highly Selective Dry Etching and Damage Control 1993, 93-21:190. The Electrochemical Society, Pennington, NJ. G.S. Mathad, Y. Horiike (Eds.).
46. Reinhardt K., DiVincenzo B., Yang C.-L., Arleo P., Marks J., Mikulan P., Gu T., Fonash S. Mat. Res. Soc. Symp. Proc. 1993, 315:267.
47. Wang Y., Graham S.W., Chan L., Loong S.T. J. Electrochem. Soc. 1997, 144:1522.
48. Somashekhar A., Ying H., Smith P.B., Aldrich D.B., Nemanich R.J. J. Electrochem. Soc. 1999, 146(6):2318.
49. Simko J.P., Oehrlein G.S., Mayer T.M. J. Electrochem. Soc. 1991, 138(1):277.
50. Braun A.E. Semiconductor International May, 2005, 28(5):41.
51. Louis D., Assous M., Blanc R., Brun P., Arvet C., Lajoinie E., Holmes D. Proceedings of the IEEE International Interconnect Technology Conference (IITC) 2001, 289. Piscataway, NJ.
52. Baklanov M., Le Q.T., Kesters E., lacopi F., Van Aelst J., Struyf H., Boullart W., Vanhaelemeersch S., Maex K. Proceedings of the IEEE International Interconnect Technology Conference (IITC) 2004, 187. Piscataway, NJ.
53. Shepherd R.A., Nguyen D., Cerny G., Loboda M.J. Fifth International Symposium on Low and High Dielectric Constant Materials 2000, 2000-05:159. The Electrochemical Society, Pennington, NJ. R. Singh, H.S. Rathore, R.P.S. Thakur, C.C. Schuckert, S.C. Sun (Eds.).
54. Shields J.A., You L., Rakhshandehroo M.R. US Patent 6,794,298 September 21, 2004.
55. Lamy S., Louveau O., Fanget G., Fayolle M., Rochat N., Louis D., Broussous L. Proceedings of the IEEE International Interconnect Technology Conference (IITC) 2002, 30. Piscataway, NJ.
56. Lin S., Jin C., Lui L., Tsai M., Daniels M., Gonzalez A., Wetzel J.T., Monnig K.A., Winebarger P.A., Jang S., Yu D., Liang M.S. Proceedings of the IEEE International Interconnect Technology Conference (IITC) 2001, 146. Piscataway, NJ.
57. Dunne J., Kennedy J., Luo L.L., Howell D.C., Kuhl N.E.C. US Patent 6,207,583 March 27, 2001.
58. Waldfried C., Berry I., Escorcia O., Han Q., Sakthivel P. US Patent 6,630,406 October 7, 2003.
59. Nguyen H.T., Kawaguchi M.N., Naik M.B., Xia L.-Q., Yieh E. US Patent 6,680,164 January 20, 2004.
60. Chien T., Flanner J.M., Morey I. US Patent 6,426,304 July 30, 2002.
61. Savas S., George R., Gilbert D., Cain J., Herrick M., Nagy A., Karuppana K. MICRO October/November, 2004, 22(8):61.
62. Stucchi M., Conard T., Vanhaelemeersch S., Van Aelst J., George R. Solid State Technology April, 2004, 47(4):511.
63. Christaud J.-F., Helle W., Ranft C., Gapasin C. Solid State Technology March, 1999, 42(3):513.
64. Rudder R.A., Fountain G.G., Markunas R.J. J. Appl. Phys. 1986, 60:3519.
65. Hsu T., Breaux L., Anthony B., Banerjee S., Tasch A. J. Electron. Mater. 1990, 19:375.
66. Moslehi M.M., Davis C.J. J. Mater. Res. 1990, 5:1159.
67. Moslehi M., Chapman R.A., Wong M., Pranjpe A., Najm H.N., Kuehne J., Yeakley R.L., Davis C.J. IEEE Transactions on Electron Devices 1992, 39(1):4.
68. Samoilov A.V., Du Bois D., Comita P.B., Carlson D. Semiconductor International November, 2000, 23(13):73.
69. Ramm J., von Kaenel H. Future Fab Intl. 7/11/2003, 15.
70. Hwang K.- H., Yoon E. J. Electrochem. Soc. 1997, 144(1):335.
71. Anthony B., Breaux L., Hsu T., Banerjee S., Tasch A. J. Vac. Sci. Technol. 1989, B7:621.
72. Yew T.-R., Reif R. J. Appl. Phys. 1990, 68:4681.
73. Yew T.-R., Reif R. J. Appl. Phys. 1989, 65:2500.
74. Wolf S. Silicon Processing for the VLSI Era. The Submicron MOSFET 1995, 3:307. Lattice Press, Sunset Beach, CA.
75. Schneider T.P., Cho J., van der Weide J., Wells S.E., Lucovsky G., Nemanich R.J., Mantini M.J., Rudder R.A., Markunas R.J. Chemical Perspectives of Microelectric Materials II 1990, 204:333. Material Research Society, Boston, MA. I.V. Interrante, K.F. Jenson, L.H. Duboise, M.E. Gross (Eds.).
76. Shibata T., Nanishi Y, Fujimoto M. Jap. Appl. Phys. (Let.) 1990, 29:L1181.
77. Kim H., Reif R. Thin Solid Films 1996, 289:192.
78. Carter R.J., Schneider T.P., Montgomery J.S., Nemanich R. J. Electrochem. Soc. 1994, 141(11):3136.
79. Montgomery J.S., Schneider T.P., Carter R.J., Barnak J.P., Chen Y.L., Hauser J.R., Nemanich R.J. Appl. Phys. Lett. 1995, 67(15):2194.
80. DelFino M., Salimian S., Hodul D. J. Appl. Phys. 1991, 70:1712.
81. DelFino M., Salimian S., Hodul D., Ellingboe A., Tsai W. J. Appl. Phys. 1992, 71(2):1001.
82. Förster C., Schnabel F., Weih P, Standen T., Ambacher O., Pezoldt J. Thin Solid Films 2004, 455-456:695.
83. Ramm J., Beck E., Zueger A., Dommann A., Pixley R.E. Thin Solid Films 1993, 228(1-2):23.
84. Schneider T.P., Cho J., Aldrich D.A., Chen Y.L., Maher D., Nemanich R.J. Second International Symposium of Cleaning Technology in Semiconductor Device Manufacturing 1992, 92-12:122. The Electrochemical Society, Pennington, NJ. J. Ruzyllo, R.E. Novak (Eds.).
85. Abrefah J., Olander D.R. Surf. Sci. 1989, 209:291.
86. Dobbs K.D., Doran D.J. J. Am. Chem. Soc. 1993, 115:3731.
87. Thomas R.E., Mantini M.J., Rudder R.A., Malta D.P., Hattangady S.V., Markunas R.J. J. Vac. Sci. Technol. 1992, A10(4):817.
88. Hsu T., Anthony B., Qian R., Irby J., Banerjee S., Tasch A., Lin S., Marcus H., Magee C. J. Electron. Mater. 1991, 20:279.
89. Sun Y.K., Bonser D.J., Engel T. Phys. Rev. 1991, B43:14309.
90. Anthony B., Hsu T., Breaux L., Qian R., Banerjee S., Tasch A. J. Electron. Mater. 1990, 19:1027.
91. Kishimoto A., Suemune I., Hamaoku K., Koui T., Honda Y., Yamanishi M. Jap. J. Appl. Phys. 1990, 29:2273.
92. Strass A., Hansch W., Kaesen F., Fehlauer G., Bieringer P., Fischer A., Eisele I. Thin Solid Films 1998, 321(1-2):261.
93. Ramm J., Beck E., Dommann A., Eisele I., Krüger D. Thin Solid Films 1994, 246:158.
94. Pomarede C.E., Roberts J., Shero E.J. US Patent 6,613,695 September 2, 2003.
95. Baklanov D.M., Shamiryan R.G., Tökei Z., Beyer G.P., Conard T., Vanhaelemeersch S., Maex K. J. Vac. Sci. Technol. 2001, B19(4):1201.
96. Taguwa T., Urabe K., Sekine M., Yamada Y., Kikkawa T. IEEE Transactions on Electron Devices 1997, 44(4):588.
97. Subrahmanyan S., Chen L.-Y, Mosely R.C. US patent 6,905,965 June 14, 2005.
98. Falkenstein Z., Hakovirta M., Nastasi M. Thin Solid Films 2001, 381(1-2):84.
99. Ogawa E.T., McPherson J.W., Rosal J.A., Dickerson K.J., Chin T.-C., Tsung L.Y., Jain M.K., Bonifield T.D., Ondrusek J.C., McKee W.R. IEEE Proc. Int'l Rel. Phys. Symp. 2002, 312.
100. Sumi H., Yanagida T., Sugano Y, Sasserath J.N. IEEE International Electron Devices Meeting 1994, 94:113.
101. Reinhardt K. Second International Symposium on Cleaning Technology in Semiconductor Device Manufacturing 1992, 92-12:133. The Electrochemical Society, Pennington, NJ. J. Ruzyllo, R. Novak (Eds.).
102. Ya P.G., Pugachevich V.P., Gromov D.G., Kudryashova E.B. J. Appl. Phys. 1996, A63(1):9.
103. Reichardt H., Frenzel A., Schober K. Microelectronic Engineering 2001, 56(1-2):73.
104. Sun S.-P., Bennett D., Zazzera L., Reagen W. Semiconductor International February, 1988, 85.
105. Johnson A.D., Entley W.R., Maroulis P.J. Solid State Technology December, 2000, 103.
106. Cox J., Koenigseder S., Decker T. MICRO March, 2001, 89.
107. Kim K.J., Oh C.H., Lee N.-E., Kim J.H., Bae J.W., Yeom G.Y., Yoon S.S. J. Vac. Sci. Technol. 2004, B22:483.
108. Hackenberg J., Holbrook B., Ingwersen T. Seventh Symposium on Plasma Processing 1988, 88-22:317. The Electrochemical Society, Pennington, NJ. http://www.bsac.eecs.berkeley.edu/~mattlast/personal/Microlabartweb/slides/wrinkled%20photoresist.html, G.S. Mathad, G.C. Schwartz, D.W. Hess (Eds.).
109. Hackenberg J., Holbrook B., Ingwersen T. Seventh Symposium on Plasma Processing 1988, 88-22:317. The Electrochemical Society, Pennington, NJ. G.S. Mathad, G.C. Schwartz, D.W. Hess (Eds.).
110. Brussaard G.J.H., Letourneur K.G.Y., Schaepkens M., van de Sanden M.C.M., Schram D.C. J. Vac. Sci. Technol. 2003, B21(1):61.
111. Balooch M. Jap. J. of Appl. Phys. 1977, 16:1557.
112. Parikh N.R., Hattangandy S.V., Posthill J.B., King M.L., Rudder R.A., Vitkavage D.J. MRS Symp. Proc. 1988, 102:275.
113. Ishii M., Nakashima K., Tajima I., Yamamoto M. Appl. Phys. Lett. 1991, 58(13):1378.
114. Cantagrel M., Marchal M. J. Material Sci. 1973, 8(12):1711.
115. Fujimura S., Yano H. J. Electrochem. Soc. 1988, 135:1195.
116. Reinberg A.R. US Patent 3,757,733 September 11, 1973.
117. Reinberg A.R., Rao R.K. US Patent 4,069,096 January 17, 1978.
118. Irving S.M., Lemons K.E. US Patent 3,837,856 September 24, 1974.
119. Mucha J., Hess D.W., Aydil E. Introduction to Microlithography 1994, 377. American Chemical Society, Washington, DC. L.F. Thompson, C.G. Willson, M.J. Bowden (Eds.).
120. Flamm D.L. Solid State Technology August, 1992, 37.
121. Lieberman M.A., Gottscho R.A, Physics of Thin Films 1993, 18:1.
122. Normand A., Granier F., Leprince P., Marec J., Shi M.K., Clouet F. Plasma Chemistry and Plasma Processing 1995, 15(2):173.
123. Collart E.J.H., Baggerman J.A.G., Visser R.J. J. Appl. Phys. 1995, 78(1):47.
124. Vossen J.L. J. Electrochem. Soc. 1979, 126(2):319.
125. Reinberg A.R., Steinberg G.N., Zarowin C.B. US Patent 4,431,898 February 14, 1984.
126. Savas S.E. US Patent 5,964,949 October 12, 1999.
127. Kim H.-W., Reif R. Thin Solid Films 1996, 289(1-2):192.
128. Hirayama H., Tatsumi T. Appl. Phys. Lett. 1989, 54:1561.
129. Uchida K., Izumi A., Matsumura H. Thin Solid Films 2001, 395(1-2):75.
130. Metselaar J.W., Kuznetsov V.I., Zhidkov A.G. J. Appl. Phys. 1994, 75(10):4910.
131. Inomata K., Koinuma H., Oikawa Y., Shiraishi T. Appl. Phys. Lett. 1995, 66(17):2188.
132. Selwyn G.S., Herrmann H.W., Park J., Henins I. Contributions to Plasma Physics 2001, 41(6):610.
133. Read M., Schwarz W., Oakes D. IEEE 31st International Conference on Plasma Science 2004, 307.
134. Jeong J.Y., Park J., Henins I., Babayan S.E., Tu V.J., Selwyn G.S., Ding G., Hicks R.F. J. Phys. Chem. 2000, A204:8027.
135. Auciello O., Flamm D.L. Plasma Diagnostics: Discharge Parameters and Chemistry 1989, Academic Press, Orlando, FL.
136. Roland J.P., Marcoux P.J., Ray G.W., Rankin G.H. J. Vac. Sci. Technol. 1985, A3:1631.
137. Hershkowitz N., Breun R.A. Rev. Sci. Instrum. 1997, 68:880.
138. Stefani J., Loewenstein L.M., Sullivan M. IEEE Transactions on Semiconductor Manufacturing 1995, 8(1):2.
139. Marcoux P.J., Foo P.D. Solid State Technology April, 1985, 115.
140. Payling R., Jones D.G., Bengtson A. Glow Discharge Optical Emission Spectrometry 1997, John Wiley & Sons, Hoboken, NJ.
141. Degenkolb E.O., Mogab C.J., Goldrick M.R., Griffiths J.E. Appl. Spectrosc. 1976, 30:520.
142. Brake M., Hinkle J., Asmussen J., Hawley M., Kerber R. J. Plasma Chemistry and Plasma Processing 1983, 3(1):63.
143. Lin T.H., Belser M., Tzeng Y. IEEE Transactions on Plasma Science 1988, 16(6):631.
144. Behle S., Georg A., Yuan Y., Engemann J., Brockhaus A. Surface and Coatings Technology 1997, 97(1-3):734.
145. Bell S.A., Hess D.W. J. Electrochem. Soc. 1992, 139:2904.
146. Wolf S. Silicon Processing for the VLSI Era. Process Technology 1986, 1:566. Lattice Press, Sunset Beach, CA.
147. Kawamoto Y. Proceedings of the Seventh Symposium on Dry Processing 1985, 5:132.
148. Pearson S.J., Corbett J.W., Shi T.S. Appl. Phys. 1987, A43:153.
149. Savas S. IEEE Plasma- and Process-Induced Damage. 1st International Symposium 1996, 127.
150. Chueng K.P., Chang C.P. J. Appl. Phys. 1994, 75(9):4415.
151. Fang S., Murakawa S., McVittie J.P. IEEE Trans. Electr. Dev. 1994, 41(10):1848.
152. You K.-F., Chang M.-C., Wu C.-Y. IEEETrans. Electr. Dev. 1998, 45(1):239.
153. Chan B.-W., Perng B.-C., Sheu L., Chiu Y.-H., Tao H.-J. IEEE Plasma- and Process-Induced Damage. 8th International Symposium 2003, 73.
154. Shin H., King C., Hu C. IEEE Reliability Physics Symposium. 30th Annual., International Symposium 1992, 37.
155. Shin H., King C.-C., Moazzami R., Horiuchi T., Hu C. IEEE, International Symposium on VLSI Technology, Systems, Applications 1991, 210.