Stripping of photoresist using a remote thermal Ar/O2 and Ar/N2/O2 plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 61-66

  Brussard, G J H ^a   Letourneur, K G Y ^a   Schaepkens, M ^b   Van De Sanden, M C M ^a   Schram, D C ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ARGON; ETCHING; MATHEMATICAL MODELS; MIXTURES; NITROGEN; OXYGEN; PLASMAS; REACTION KINETICS; STRIPPING (REMOVAL); SURFACE CHEMISTRY; THERMAL EFFECTS;

CASCADED ARC; HIGH RADICAL DENSITY; REMOTE THERMAL PLASMA;

PHOTORESISTS;

EID: 0037207687     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1532021     Document Type: Article

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