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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 50-55

Reactive ion etching mechanism of copper film in chlorine-based electron cyclotron resonance plasma

(4) Lee, Sung Kwon a Chun, Sung Soon a Hwang, ChanYong b Lee, Won Jong a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Korea Research Institute of Standards and Science (South Korea)

Author keywords

Chlorine; Copper; Electron cyclotron resonance; Etching; Optical emission spectroscopy; Plasma; X ray photoelectron spectroscopy

Indexed keywords

ATOMIC CHLORINE; COPPER FILM; ELECTRON CYCLOTRON RESONANCE PLASMA; OPTICAL EMISSION SPECTROSCOPY;

CHEMICAL REACTIONS; CHLORINE; COMPOSITION EFFECTS; COPPER; ELECTRON CYCLOTRON RESONANCE; EMISSION SPECTROSCOPY; REACTIVE ION ETCHING; VAPOR PRESSURE; X RAY PHOTOELECTRON SPECTROSCOPY;

METALLIC FILMS;

EID: 0030644568 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.36.50 Document Type: Article

Times cited : (34)

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