Relationship of etch reaction and reactive species flux in C4F8/Ar/O2 plasma for SiO2 selective etching over Si and Si3N4

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 5, 2001, Pages 2089-2096

  Matsui, M ^a   Tatsumi, T ^a   Sekine, M ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FLUOROCARBONS; SILICA; SILICON NITRIDE; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

REACTIVE SPECIES FLUX;

PLASMA ETCHING;

EID: 0035441622     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1376709     Document Type: Article

References (13)