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Volumn 14, Issue 6, 1996, Pages 3702-3705

Realization of atomic layer etching of silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 5344239661     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588651     Document Type: Article
Times cited : (145)

References (17)
  • 11
    • 5344221396 scopus 로고
    • Extended Abstracts Abstract No. 314, Paper presented at the Spring meeting of the Electrochemical Society, Reno, Nevada, May 21-26
    • T. Matsuura, K. Suzue, J. Murota, Y. Sawada, and T. Ohmi, Self-Limited Fractional Atomic-Layer Etching of Si, Extended Abstracts Vol. 95-1, Abstract No. 314, Paper presented at the Spring meeting of the Electrochemical Society, Reno, Nevada, May 21-26, 1995.
    • (1995) Self-Limited Fractional Atomic-Layer Etching of Si , vol.95 , Issue.1
    • Matsuura, T.1    Suzue, K.2    Murota, J.3    Sawada, Y.4    Ohmi, T.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.