Low-temperature etching of Cu by hydrogen-based plasmas

ACS Applied Materials and Interfaces

Volumn 2, Issue 8, 2010, Pages 2175-2179

  Wu, Fangyu ^a   Levitin, Galit ^a   Hess, Dennis W ^a  

^a Georgia Institute of Technology   (United States)

Author keywords

Cu; etching; interconnects; low temperature; plasma

Indexed keywords

CHEMICAL AND PHYSICAL CHARACTERISTICS; CU; CU ETCHING; CU THIN FILM; ETCH PROCESS; ETCH RATES; HYDROGEN ATOMS; INTERCONNECTS; LOW TEMPERATURES; ROOM TEMPERATURE; ULTRAVIOLET PHOTON;

ELECTROMAGNETIC INDUCTION; HYDROGEN; IMPACT IONIZATION; INDUCTIVELY COUPLED PLASMA; MULTIPHOTON PROCESSES; PLASMA ETCHING;

COPPER;

EID: 79151480186     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am1003206     Document Type: Article

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