Scaling of SiGe heterojunction bipolar transistors

Proceedings of the IEEE

Volumn 93, Issue 9, 2005, Pages 1522-1538

  Rieh, Jae Sung ^a   Stricker, Andreas ^c,d   Greenberg, David ^b   Freeman, Greg ^c  

^a Korea University   (South Korea)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

^d IBM   (United States)

Author keywords

Heterojunction bipolar transistors (HBTs); Scaling; Silicon germanium

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; NATURAL FREQUENCIES; PERFORMANCE; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

PERFORMANCE METRICS; SCALED DEVICES; SCALING; SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 24944583056     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2005.852228     Document Type: Conference Paper

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