Device scaling and application trends for over 200GHz SiGe HBTs

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

Volumn , Issue , 2003, Pages 6-9

  Freeman, G ^a   Rieh, Jae Sung ^a   Jagannathan, B ^a   Yang, Zhijian ^a   Guarin, F ^a   Joseph, A ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Current density; Germanium silicon alloys; Heterojunction bipolar transistors; Hot carriers; Maintenance; Silicon germanium; Thermal degradation; Thermal management; Thermal resistance; Voltage

Indexed keywords

BICMOS TECHNOLOGY; CURRENT DENSITY; ELECTRIC POTENTIAL; GERMANIUM; GERMANIUM ALLOYS; HEAT RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; HOT CARRIERS; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUITS; MAINTENANCE; PYROLYSIS; SILICON; SILICON ALLOYS; TEMPERATURE CONTROL;

AVALANCHE CURRENTS; AVALANCHE MULTIPLICATION; BASE RESISTANCE; CIRCUIT DESIGNS; DEVICE OPERATIONS; DEVICE-SCALING; GERMANIUM SILICON ALLOY; SILICON GERMANIUM;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 2442463677     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2003.1196655     Document Type: Conference Paper

References (14)

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