Sige hbt technology: a new contender for si-based rf and microwave circuit applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 5 PART 2, 1998, Pages 572-589

  Cressler, John D ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

Bandgap engineering; Bicmos; Heterojunction bipolar transistor; Microwave circuits; Radio frequency circuits; Sige hbt; Silicon germanium

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYOGENICS; ENERGY GAP; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

BANDGAP ENGINEERING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032072280     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.668665     Document Type: Article

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