Sub-10-fJ ECL/68-μA 4.7-GHz divider ultra-low-power SiGe base bipolar transistors with a wedge-shaped CVD-SiO2 isolation structure and a BPSG-refilled trench

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1996, Pages 245-248

  Kondo, M ^a   Oda, K ^a   Ohue, E ^a   Shimamoto, H ^a   Tanabe, M ^a   Onai, T ^a   Washio, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOROSILICATE GLASS; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DIVIDING CIRCUITS (ARITHMETIC); OSCILLATORS (ELECTRONIC); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

BOROPHOSPHOSILICATE GLASS; OSCILLATION FREQUENCY; REFILLED ISOLATION TRENCH; RING OSCILLATOR; TOGGLE FREQUENCY;

BIPOLAR TRANSISTORS;

EID: 0030413570     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)